X-On Electronics has gained recognition as a prominent supplier of DTC943TUBTL Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTC943TUBTL Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTC943TUBTL ROHM

DTC943TUBTL electronic component of ROHM
DTC943TUBTL ROHM
DTC943TUBTL Bipolar Transistors - Pre-Biased
DTC943TUBTL  Semiconductors

Images are for reference only
See Product Specifications
Part No. DTC943TUBTL
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased NPN Digital Transtr w/built in resistors
Datasheet: DTC943TUBTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.4814 ea
Line Total: USD 2.41 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 5
Multiples : 1
5 : USD 0.4814
10 : USD 0.3464
100 : USD 0.1966
500 : USD 0.1384
1000 : USD 0.0844

0
Ship by Wed. 02 Jul to Fri. 04 Jul
MOQ : 1
Multiples : 1
1 : USD 0.4012
10 : USD 0.27
100 : USD 0.1452
1000 : USD 0.0814
3000 : USD 0.0671
9000 : USD 0.0572
24000 : USD 0.055
45000 : USD 0.0528
99000 : USD 0.0506

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Maximum Operating Frequency
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Maximum Operating Temperature
Series
Packaging
Emitter- Base Voltage Vebo
Brand
Channel Mode
Maximum Dc Collector Current
Pd - Power Dissipation
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DTC943TUBTL from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTC943TUBTL and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DTC943TUB NPN 400mA 20V Digital Transistor (Bias Resistor Builtin Transistor) For Muting. Datasheet llOutline Parameter Value SOT-323FL V 20V CEO SC-85 I 400mA C R 4.7k 1 (UMT3F) llFeatures llInner circuit 1) Built-In Biasing Resistor, R = 4.7k 1 2) High Breakdown Voltage of Emitter to Base BV is Min. 40V at I =50A EBO E 3) Low Output ON Resistance. R is Typ. 0.6 ON at V =5V I 4) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . llApplication MUTING llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-323FL DTC943TUB 2021 TL 180 8 3000 90 (UMT3F) llNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com 1/5 20160905 - Rev.002 2016 ROHM Co., Ltd. All rights reserved. DTC943TUB Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 40 V CBO V Collector-emitter voltage 20 V CEO V Emitter-base voltage 40 V EBO I Collector current 400 mA C *1 Power dissipation P 200 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 40 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 20 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 40 - - V EBO E Collector cut-off current I V = 40V - - 500 nA CBO CB Emitter cut-off current I V = 40V - - 500 nA EBO EB Collector-emitter saturation voltage V I = 30mA, I = 3mA - 30 100 mV CE(sat) C B h DC current gain V = 5V, I = 10mA 820 - 2700 - FE CE C R Input resistance - 3.29 4.7 6.11 k 1 V = 6V, I = -4mA, CE E *2 f Transition frequency - 35 - MHz T f = 10MHz V = 5V, i R Output on resistance - 0.6 - on R = 1k, f = 1kHz L (See test circuit) *1 Each terminal mounted on a reference land. *2 Characteristics of built-in transistor www.rohm.com 2/5 20160905 - Rev.002 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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