X-On Electronics has gained recognition as a prominent supplier of DTD123ECT116 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTD123ECT116 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTD123ECT116 ROHM

DTD123ECT116 electronic component of ROHM
DTD123ECT116 ROHM
DTD123ECT116 Bipolar Transistors - Pre-Biased
DTD123ECT116  Semiconductors

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See Product Specifications
Part No. DTD123ECT116
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased NPN 500mA/50V w/bias resistors
Datasheet: DTD123ECT116 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2962 ea
Line Total: USD 0.3 
Availability - 9439
Ship by Wed. 18 Jun to Fri. 20 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9439
Ship by Wed. 18 Jun to Fri. 20 Jun
MOQ : 1
Multiples : 1
1 : USD 0.2962
10 : USD 0.1813
100 : USD 0.108
500 : USD 0.0737
1000 : USD 0.066
3000 : USD 0.0517
6000 : USD 0.0495
9000 : USD 0.0462
24000 : USD 0.0396

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Maximum Operating Frequency
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Maximum Operating Temperature
Series
Packaging
Output Voltage
Brand
Channel Mode
Maximum Dc Collector Current
Pd - Power Dissipation
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DTD123ECT116 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTD123ECT116 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DTD123EC NPN 500mA 50V Digital Transistor (Bias Resistor Built-in Transistor) Datasheet llOutline Parameter Value SOT-23 V 50V CC I 500mA C(MAX.) R 2.2k 1 R 2.2k (SST3) 2 llFeatures llInner circuit 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.(see equivalent circuit) 2)The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3)Only the on/off conditions need to be set for operation, making the device desigh easy. llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 DTD123EC 2924 T116 180 8 3000 F22 (SST3) www.rohm.com 1/5 20151208 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. DTD123EC Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Supply voltage 50 V CC V Input voltage -10 to 12 V IN *1 I Collector current 500 mA C(MAX) *2 P Power dissipation 200 mW D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.5 I(off) CC O Input voltage V V V = 0.3V, I = 20mA 3.0 - - I(on) O O V Output voltage I = 50mA, I = 2.5mA - 100 300 mV O(on) O I I Input current V = 5V - - 3.8 mA I I I V = 50V, V = 0V Output current - - 500 nA O(off) CC I G DC current gain V = 5V, I = 50mA 39 - - - I O O R Input resistance - 1.54 2.2 2.86 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = 10V, I = -50mA, CE E *1 f Transition frequency - 200 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land. www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/5 20151208 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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