DTD123TC HZG 500mA/40V Digital transistor (with built-in resistor) Datasheet AEC-Q101 Qualified llOutline Parameter Value SOT-23 V 40V CEO I 500mA C R 2.2k 1 (SST3) llFeatures llInner circuit 1) Built-In Biasing Resistors, R = 2.2k 1 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 3)Only the on/off conditions need to be set for operation, making the device desigh easy. 4) Complementary PNP Types: DTB123TC HZG llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 DTD123TC HZG 2924 T116 180 8 3000 F02 (SST3) www.rohm.com 1/4 20160701 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. DTD123TC HZG Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 40 V CEO V Emitter-base voltage 5 V EBO *1 I Collector current 500 mA C *2 P Power dissipation 200 mW D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 40 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E I V = 50V Collector cut-off current - - 500 nA CBO CB I V = 4V Emitter cut-off current - - 500 nA EBO EB Collector-emitter saturation voltage V I = 50mA, I = 2.5mA - - 300 mV CE(sat) C B *3 h V = 5V, I = 50mA DC current gain 100 250 600 - FE CE C R Input resistance - 1.54 2.2 2.86 k 1 V = 10V, I = -50mA, CE E *1 f Transition frequency - 200 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/4 2016 ROHM Co., Ltd. All rights reserved. 20160701 - Rev.001