DTD123TK Datasheet NPN 500mA 40V Digital Transistors (Bias Resistor Built-in Transistors) lOutline SMT3 Parameter Value Collector V 40V CEO Base I 500mA C Emitter R 2.2k W DTD123TK SOT-346 (SC-59) lFeatures lInner circuit 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. 5) Complementary PNP Types :DTB123TK 6) Lead Free/RoHS Compliant. l Application Switching circuit, Inverter circuit, Interface circuit, Driver circuit lPackaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) DTD123TK SMT3 2928 T146 180 8 3,000 F02 www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.07 - Rev.C 1/4Data Sheet DTD123TK lAbsolute maximum ratings (Ta = 25C) Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V 40 V Collector-emitter voltage CEO V 5 V Emitter-base voltage EBO I 500 mA Collector current C *2 200 mW Power dissipation P d T 150 C Junction temperature j T Range of storage temperature -55 to +150 C stg lElectrical characteristics(Ta = 25C) Parameter Symbol Conditions Min. Typ. Max. Unit Collector-base breakdown voltage BV I = 50mA 50 - - V CBO C BV I = 1mA Collector-emitter breakdown voltage 40 - - V C CEO BV I = 50mA Emitter-base breakdown voltage 5 - - V EBO E I V = 50V Collector cut-off current - - 0.5 mA CBO CB V = 4V Emitter cut-off current I - - 0.5 EB mA EBO I / I = 50mA / 2.5mA Collector-emitter saturation voltage V - - 0.3 V C B CE(sat) h V = 5V , I = 50mA DC current gain 100 250 600 - CE C FE - Emitter-base resistance R 1.54 2.2 2.86 k W V = 10V, I = -50mA, *1 CE E Transition frequency f - 200 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.07 - Rev.C 2/4