Product Information

EDZCTE616.8B

EDZCTE616.8B electronic component of ROHM

Datasheet
Zener Diodes DIODE ZENER SNGL 6.79V 2% 150MW

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 0.9459
10 : USD 0.6583
100 : USD 0.1456
1000 : USD 0.1121
3000 : USD 0.097
9000 : USD 0.0915
24000 : USD 0.0887
45000 : USD 0.0859
99000 : USD 0.0832
N/A

Obsolete
0 - WHS 2

MOQ : 148
Multiples : 1
148 : USD 0.1256
200 : USD 0.1102
500 : USD 0.1074
1000 : USD 0.0948
N/A

Obsolete
0 - WHS 3

MOQ : 348
Multiples : 348
348 : USD 0.0636
500 : USD 0.0316
N/A

Obsolete
0 - WHS 4

MOQ : 345
Multiples : 348
345 : USD 0.0643
500 : USD 0.0057
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Vz - Zener Voltage
Zener Current
Pd - Power Dissipation
Maximum Reverse Leakage Current
Maximum Operating Temperature
Configuration
Mounting Style
Package / Case
Packaging
Minimum Operating Temperature
Series
Product
Brand
Power Dissipation
Factory Pack Quantity :
Zener Voltage
Cnhts
Hts Code
Ir - Reverse Current
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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EDZC6.8B Diodes Zener diode EDZC6.8B z Applications z External dimensions (Unit : mm) z Land size figure (Unit : mm) Voltage regulation 0.80.05 0.120.05 0.8 z Features 1) Ultra small mold type. (EMD2) 2) High reliability 3) Bi chip-mounter automatic mounting is possible. z Structure EMD2 z Construction z Structure Silicon epitaxial planar 0.30.05 0.60.1 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) z Taping specifications (Unit : mm) 0.20.05 1.50.05 4.00.1 2.00.05 0.2 0.5 0.950.06 4.00.1 2.00.05 0.760.05 0 z Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Power dissipation P 150 mW Junction temperature 150 Tj Storage temperature -55 to +150 Tstg z Electrical characteristics (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Zener voltage V 6.65 - 6.93 V I =5mA z Z Reverse current I V =3.5V -- 0.5 A R R Capacitance between terminals V =0V , f=1MHz Ct - 3.0 - pF R 1/2 2.450.1 1.30.06 0 1.20.05 1.60.1 0.6 3.50.05 1.750.1 0.6 8.00.15 1.260.05 0 1.7EDZC6.8B Diodes z Electrical characteristic curves (Ta=25C) Ta=150 Ta=125 10 10 100 f=1MHz 10 Ta=25 Ta=75 Ta=75 1 1 Ta=125 0.1 Ta=-25 1 Ta=25 Ta=150 0.01 0.1 Ta=-25 0.001 0.0001 0.1 0.01 0.00001 00.5 11.522.5 33.5 4 66.577.5 8 01 23 4 ZENER VOLTAGE:Vz(V) REVERSE VOLTAGEVR(V) REVERSE VOLTAGE:VR(V) Vz-Iz CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS 7 0.2 10 Ta=25 Ta=25 0.18 Ta=25 9 IZ=5mA VR=3.5V f=1MHz 6.9 0.16 8 n=30pcs n=30pcs VR=0V 0.14 7 n=10pcs 6.8 0.12 6 0.1 5 AVE:3.10pF AVE:6.830V 4 6.7 0.08 3 0.06 AVE:0.0143nA 2 6.6 0.04 1 0.02 0 0 6.5 Ct DISRESION MAP Vz DISRESION MAP IR DISRESION MAP 100 1000 Rth(j-a) Rth(j-c) 10 100 Mounted on epoxy board IM=10mA IF=100mA time 1ms 300us 1 10 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 TIME:t(s) ZENER CURRENT(mA) Rth-t CHARACTERISTICS Zz-Iz CHARACTERISTICS 2/2 ZENER VOLTAGE:Vz() ZENER CURRENT:Iz(mA) DYNAMIC IMPEDANCE:Zz() REVERSE CURRENT:IR (nA) TRANSIENT REVERSE CURRENT:IR(nA) THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE BETWEEN CAPACITANCE TERMINALS:Ct(pF) BETWEENTERMINALS:Ct(pF)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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