EDZCTE616.8B ROHM

EDZCTE616.8B electronic component of ROHM
EDZCTE616.8B ROHM
EDZCTE616.8B Zener Diodes
EDZCTE616.8B  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of EDZCTE616.8B Zener Diodes across the USA, India, Europe, Australia, and various other global locations. EDZCTE616.8B Zener Diodes are a product manufactured by ROHM. We provide cost-effective solutions for Zener Diodes, ensuring timely deliveries around the world.

Part No. EDZCTE616.8B
Manufacturer: ROHM
Category: Zener Diodes
Description: Zener Diodes DIODE ZENER SNGL 6.79V 2% 150MW
Datasheet: EDZCTE616.8B Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.9459
10$ 0.6583
100$ 0.1456
1000$ 0.1121
3000$ 0.097
9000$ 0.0915
24000$ 0.0887
45000$ 0.0859
99000$ 0.0832
N/A

Obsolete

Availability 0
MOQ : 125
Multiples : 1
QtyUnit Price
125$ 2.0205
N/A

Obsolete

Availability 0
MOQ : 125
Multiples : 1
QtyUnit Price
125$ 2.0205
N/A

Obsolete

Availability 0
MOQ : 345
Multiples : 348
QtyUnit Price
345$ 0.0643
500$ 0.0057
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Vz - Zener Voltage
Zener Current
Pd - Power Dissipation
Maximum Reverse Leakage Current
Maximum Operating Temperature
Configuration
Mounting Style
Package / Case
Packaging
Minimum Operating Temperature
Series
Product
Brand
Power Dissipation
Factory Pack Quantity :
Zener Voltage
Cnhts
Hts Code
Ir - Reverse Current
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the EDZCTE616.8B from our Zener Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EDZCTE616.8B and other electronic components in the Zener Diodes category and beyond.

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EDZC6.8B Diodes Zener diode EDZC6.8B z Applications z External dimensions (Unit : mm) z Land size figure (Unit : mm) Voltage regulation 0.80.05 0.120.05 0.8 z Features 1) Ultra small mold type. (EMD2) 2) High reliability 3) Bi chip-mounter automatic mounting is possible. z Structure EMD2 z Construction z Structure Silicon epitaxial planar 0.30.05 0.60.1 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) z Taping specifications (Unit : mm) 0.20.05 1.50.05 4.00.1 2.00.05 0.2 0.5 0.950.06 4.00.1 2.00.05 0.760.05 0 z Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Power dissipation P 150 mW Junction temperature 150 Tj Storage temperature -55 to +150 Tstg z Electrical characteristics (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Zener voltage V 6.65 - 6.93 V I =5mA z Z Reverse current I V =3.5V -- 0.5 A R R Capacitance between terminals V =0V , f=1MHz Ct - 3.0 - pF R 1/2 2.450.1 1.30.06 0 1.20.05 1.60.1 0.6 3.50.05 1.750.1 0.6 8.00.15 1.260.05 0 1.7EDZC6.8B Diodes z Electrical characteristic curves (Ta=25C) Ta=150 Ta=125 10 10 100 f=1MHz 10 Ta=25 Ta=75 Ta=75 1 1 Ta=125 0.1 Ta=-25 1 Ta=25 Ta=150 0.01 0.1 Ta=-25 0.001 0.0001 0.1 0.01 0.00001 00.5 11.522.5 33.5 4 66.577.5 8 01 23 4 ZENER VOLTAGE:Vz(V) REVERSE VOLTAGEVR(V) REVERSE VOLTAGE:VR(V) Vz-Iz CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS 7 0.2 10 Ta=25 Ta=25 0.18 Ta=25 9 IZ=5mA VR=3.5V f=1MHz 6.9 0.16 8 n=30pcs n=30pcs VR=0V 0.14 7 n=10pcs 6.8 0.12 6 0.1 5 AVE:3.10pF AVE:6.830V 4 6.7 0.08 3 0.06 AVE:0.0143nA 2 6.6 0.04 1 0.02 0 0 6.5 Ct DISRESION MAP Vz DISRESION MAP IR DISRESION MAP 100 1000 Rth(j-a) Rth(j-c) 10 100 Mounted on epoxy board IM=10mA IF=100mA time 1ms 300us 1 10 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 TIME:t(s) ZENER CURRENT(mA) Rth-t CHARACTERISTICS Zz-Iz CHARACTERISTICS 2/2 ZENER VOLTAGE:Vz() ZENER CURRENT:Iz(mA) DYNAMIC IMPEDANCE:Zz() REVERSE CURRENT:IR (nA) TRANSIENT REVERSE CURRENT:IR(nA) THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE BETWEEN CAPACITANCE TERMINALS:Ct(pF) BETWEENTERMINALS:Ct(pF)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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