EMD3T2R ROHM

EMD3 / UMD3N / IMD3A Datasheet General purpose (dual digital transistor) <For DTr1(NPN)> llOutline Parameter Value SOT-563 SOT-363 V 50V CC I 100mA C(MAX.) R 10k 1 EMD3 UMD3N R (EMT6) (UMT6) 10k 2 SOT-457 <For DTr2(PNP)> Parameter Value V -50V CC I -100mA C(MAX.) IMD3A R (SMT6) 10k 1 R 10k 2 llFeatures llInner circuit 1)Both the DTA114E chip and DTC114E EMD3 / UMD3N chip in a EMT or UMT or SMT package. 2)Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. IMD3A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMD3 1616 T2R 180 8 8000 D3 (EMT6) SOT-363 UMD3N 2021 TR 180 8 3000 D3 (UMT6) SOT-457 IMD3A 2928 T108 180 8 3000 D3 (SMT6) www.rohm.com 1/9 20151020 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMD3 / UMD3N / IMD3A Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol DTr1(NPN) DTr2(PNP) Unit V Supply voltage 50 -50 V CC V Input voltage -10 to 40 -40 to 10 V IN I Output current 50 -50 mA O *1 Collector current I 100 -100 mA C(MAX) *2*3 P EMD3/ UMD3N 150 D Power dissipation mW/Total *2*4 P IMD3A 300 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <For DTr1(NPN)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.5 I(off) CC O Input voltage V V V = 0.3V, I = 10mA 3.0 - - I(on) O O Output voltage V I = 10mA, I = 0.5mA - 100 300 mV O(on) O I I Input current V = 5V - - 880 A I I I Output current V = 50V, V = 0V - - 500 nA O(off) CC I DC current gain G V = 5V, I = 5mA 30 - - - I O O R Input resistance - 7 10 13 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz llElectrical characteristics (T = 25C) <For DTr2(PNP)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.5 I(off) CC O Input voltage V V V = -0.3V, I = -10mA -3.0 - - I(on) O O V Output voltage I = -10mA, I = -0.5mA - -100 -300 mV O(on) O I I Input current V = -5V - - -880 A I I Output current I V = -50V, V = 0V - - -500 nA O(off) CC I G DC current gain V = -5V, I = -5mA 30 - - - I O O Input resistance R - 7 10 13 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com 2/9 20151020 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.