EMD9T2R ROHM

EMD9 / UMD9N / IMD9A Datasheet General purpose (dual digital transistor) <For DTr1(NPN)> llOutline Parameter Value SOT-563 SOT-363 V 50V CC I 100mA C(MAX.) R 10k 1 EMD9 UMD9N R (EMT6) (UMT6) 47k 2 SOT-457 <For DTr2(PNP)> Parameter Value V -50V CC I -100mA C(MAX.) IMD9A R (SMT6) 10k 1 R 47k 2 llFeatures llInner circuit 1)DTA114Y and DTC114Y transistor are EMD9 / UMD9N built-in a EMT or UMT or SMT package. 2)Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. IMD9A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMD9 1616 T2R 180 8 8000 D9 (EMT6) SOT-363 UMD9N 2021 TR 180 8 3000 D9 (UMT6) SOT-457 IMD9A 2928 T108 180 8 3000 D9 (SMT6) www.rohm.com 1/9 20151020 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMD9 / UMD9N / IMD9A Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol DTr1(NPN) DTr2(PNP) Unit V Supply voltage 50 -50 V CC V Input voltage -6 to 40 -40 to 6 V IN I Output current 70 -70 mA O *1 Collector current I 100 -100 mA C(MAX) *2*3 P EMD9/ UMD9N 150 D Power dissipation mW/Total *2*4 P IMD9A 300 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <For DTr1(NPN)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.3 I(off) CC O Input voltage V V V = 0.3V, I = 1mA 1.4 - - I(on) O O Output voltage V I = 5mA, I = 0.25mA - 100 300 mV O(on) O I I Input current V = 5V - - 880 A I I I Output current V = 50V, V = 0V - - 500 nA O(off) CC I DC current gain G V = 5V, I = 5mA 68 - - - I O O R Input resistance - 7 10 13 k 1 R /R Resistance ratio - 3.7 4.7 5.7 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz llElectrical characteristics (T = 25C) <For DTr2(PNP)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.3 I(off) CC O Input voltage V V V = -0.3V, I = -1mA -1.4 - - I(on) O O V Output voltage I = -5mA, I = -0.25mA - -100 -300 mV O(on) O I I Input current V = -5V - - -880 A I I Output current I V = -50V, V = 0V - - -500 nA O(off) CC I G DC current gain V = -5V, I = -5mA 68 - - - I O O Input resistance R - 7 10 13 k 1 R /R Resistance ratio - 3.7 4.7 5.7 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com 2/9 20151020 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.