X-On Electronics has gained recognition as a prominent supplier of EMG1T2R BIPOLAR TRANSISTORS - PRE-BIASED across the USA, India, Europe, Australia, and various other global locations. EMG1T2R BIPOLAR TRANSISTORS - PRE-BIASED are a product manufactured by ROHM. We provide cost-effective solutions for BIPOLAR TRANSISTORS - PRE-BIASED, ensuring timely deliveries around the world.

EMG1T2R ROHM

EMG1T2R electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.EMG1T2R
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: ROHM Semiconductor Bipolar Transistors - Pre-Biased DUAL NPN 50V 30MA
Datasheet: EMG1T2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

645: USD 0.063 ea
Line Total: USD 40.64

Availability - 31306
Ships to you between
Fri. 21 Jun to Thu. 27 Jun
MOQ: 645  Multiples: 1
Pack Size: 1
Availability Price Quantity
6007 - WHS 1


Ships to you between Thu. 27 Jun to Mon. 01 Jul

MOQ : 1
Multiples : 1
1 : USD 0.36
10 : USD 0.2553
100 : USD 0.1461
1000 : USD 0.1046
2500 : USD 0.1035
8000 : USD 0.0943
24000 : USD 0.0943
48000 : USD 0.0909
96000 : USD 0.0897

7594 - WHS 2


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 327
Multiples : 1
327 : USD 0.3117
500 : USD 0.3006
1000 : USD 0.2907
2500 : USD 0.2821
5000 : USD 0.2746

7760 - WHS 3


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 327
Multiples : 1
327 : USD 0.3117
500 : USD 0.3006
1000 : USD 0.2907
2500 : USD 0.2821
5000 : USD 0.2746

31306 - WHS 4


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 645
Multiples : 1
645 : USD 0.063
1000 : USD 0.0595
2000 : USD 0.058
8000 : USD 0.056
16000 : USD 0.0537
32000 : USD 0.0528

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Maximum Operating Temperature
Series
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the EMG1T2R from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EMG1T2R and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

EMG1 / UMG1N / FMG1A Emitter common(dual digital transistors) Datasheet llOutline Parameter DTr1 and DTr2 SOT-553 SOT-353 V 50V CC I 100mA C(MAX.) R 22k 1 EMG1 UMG1N R 22k (EMT5) (UMT5) 2 SOT-25 llFeatures 1)Two DTC124E chips in a EMT or UMT or SMT package. FMG1A 2)Mounting cost and area can be cut in half. (SMT5) llInner circuit EMG1 / UMG1N FMG1A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-553 EMG1 1616 T2R 180 8 8000 G1 (EMT5) SOT-353 UMG1N 2021 TR 180 8 3000 G1 (UMT5) SOT-25 FMG1A 2928 T148 180 8 3000 G1 (SMT5) www.rohm.com 1/7 20151001 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMG1 / UMG1N / FMG1A Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Supply voltage 50 V CC V Input voltage -10 to 40 V IN I Output current 30 mA O *1 I Collector current 100 mA C(MAX) *2*3 P EMG1 150 D *2*3 P Power dissipation UMG1N 150 mW D *2*4 FMG1A P 300 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.5 I(off) CC O Input voltage V V V = 0.2V, I = 5mA 3.0 - - I(on) O O V I = 10mA, I = 0.5mA Output voltage - 100 300 mV O(on) O I I Input current V = 5V - - 360 A I I I V = 50V, V = 0V Output current - - 500 nA O(off) CC I G DC current gain V = 5V, I = 5mA 56 - - - I O O R Input resistance - 15.4 22 28.6 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/7 20151001 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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