EMG8T2R ROHM

EMG8 / UMG8N Emitter common (dual digital transistor) Datasheet llOutline Parameter DTr1 and DTr2 SOT-553 SOT-353 V 50V CC I 100mA C(MAX.) R 4.7k 1 EMG8 UMG8N R (EMT5) (UMT5) 47k 2 llFeatures llInner circuit 1)Two DTC143Z chips in a EMT or UMT package. 2)Mounting cost and area can be cut in half. llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-553 EMG8 1616 T2R 180 8 8000 G8 (EMT5) SOT-353 UMG8N 2021 TR 180 8 3000 G8 (UMT5) www.rohm.com 1/6 20151201 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMG8 / UMG8N Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Supply voltage 50 V CC V Input voltage -5 to 30 V IN I Output current 100 mA O *1 I Collector current 100 mA C(MAX) *2*3 P EMG8 150 D Power dissipation mW/Total *2*3 P UMG8N 150 D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.5 I(off) CC O Input voltage V V V = 0.3V, I = 5mA 1.3 - - I(on) O O V I = 5mA, I = 0.25mA Output voltage - 100 300 mV O(on) O I I Input current V = 5V - - 1.8 mA I I I V = 50V, V = 0V Output current - - 500 nA O(off) CC I G V = 5V, I = 10mA DC current gain 80 - - - I O O R Input resistance - 3.29 4.7 6.11 k 1 R /R Resistance ratio - 8 10 12 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. www.rohm.com 2/6 20151201 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.