X-On Electronics has gained recognition as a prominent supplier of EMH4T2R Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. EMH4T2R Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

EMH4T2R ROHM

EMH4T2R electronic component of ROHM
EMH4T2R ROHM
EMH4T2R Bipolar Transistors - Pre-Biased
EMH4T2R Semiconductors

Images are for reference only
See Product Specifications
Part No. EMH4T2R
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: ROHM Semiconductor Bipolar Transistors - Pre-Biased DUAL NPN 50V 100MA
Datasheet: EMH4T2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8000: USD 0.0846 ea
Line Total: USD 676.8 
Availability - 7760
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ: 8000  Multiples: 8000
Pack Size: 8000

 EMH4T2R More Buying Options & Price Grid(s)

Availability Price Quantity
7760
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 8000
Multiples : 8000
8000 : USD 0.0846
16000 : USD 0.0831
24000 : USD 0.0818

3511
Ship by Wed. 11 Jun to Fri. 13 Jun
MOQ : 1
Multiples : 1
1 : USD 0.4012
10 : USD 0.33
100 : USD 0.216
500 : USD 0.1474
1000 : USD 0.1199
2500 : USD 0.11
5000 : USD 0.1023
8000 : USD 0.0979
24000 : USD 0.0935

7590
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 721
Multiples : 1
721 : USD 0.3887
1000 : USD 0.2912
2000 : USD 0.2487

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Maximum Operating Temperature
Series
Packaging
Emitter- Base Voltage Vebo
Brand
Power Dissipation
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the EMH4T2R from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EMH4T2R and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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Additional Infomation About Product

EMH4 / UMH4N / IMH4A Datasheet General purpose (dual digital transistor) llOutline Parameter DTr1 and DTr2 SOT-563 SOT-363 V 50V CEO I 100mA C R 10k 1 EMH4 UMH4N (EMT6) (UMT6) SOT-457 llFeatures 1)Two DTC114T chips in a EMT or UMT or SMT package. IMH4A 2)Mounting possible with EMT3 or UMT3 or (SMT6) SMT3 automatic mounting machines. 3)Transistor elements are independent, llInner circuit eliminating interference. 4)Mounting cost and area can be cut in half. EMH4 / UMH4N IMH4A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMH4 1616 T2R 180 8 8000 H4 (EMT6) SOT-363 UMH4N 2021 TN 180 8 3000 H4 (UMT6) SOT-457 IMH4A 2928 T110 180 8 3000 H4 (SMT6) www.rohm.com 1/6 20151015 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMH4 / UMH4N / IMH4A Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO I Collector current 100 mA C *1*2 P EMH4 150 D *1*2 P Power dissipation UMH4N 150 mW/Total D *1*3 IMH4A P 300 D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E I V = 50V Collector cut-off current - - 500 nA CBO CB I V = 4V Emitter cut-off current - - 500 nA EBO EB Collector-emitter saturation voltage V I = 10mA, I = 1mA - - 300 mV C B CE(sat) h V = 5V, I = 1mA DC current gain 100 250 600 - FE CE C R Input resistance - 7 10 13 k 1 V = 10V, I = -5mA, CE E *4 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. *4 Characteristics of built-in transistor. www.rohm.com 2/6 2015 ROHM Co., Ltd. All rights reserved. 20151015 - Rev.002

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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