EMZC6.8NTL ROHM

Data Sheet ESD Protection Diode EMZC6.8N Applications Dimensions (Unit : mm) Land size figure (Unit : mm) ESD Protection 1.0 1.6 0.2 0.5 0.5 0.30.1 0.15 0.05 0.05 Features (3) 1)Ultra small mold type. (EMD3) 0.7 2)Low Capacitance 0 0 .1 0.6 0.6 (2) (1) 0.20.1 EMD3 -0.05 0.55 0.1 0.5 0.5 Construction 1.0 0.1 0.7 0.1 Silicon epitaxial Structure ROHM : EMD3 JEDEC : SOT-416 JEITA : SC-75A dot (year week factory) Taping specifications (Unit : mm) 1.1.55500..11 2.00.05 0.30.1 4.00.1 0 0 1.80.1 0.50.1 0.90.2 Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Power dissipation (*1 150 PmW Junction temperature 150 Tj C Storage temperature Tstg 55 to 150 C (*1) Total of 2 elements Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions V Zener voltage 6.65 - 6.93 V I =5mA Z Z I Reverse current - - 0.50 AV =3.5V R R C Capacitance between terminals -3 - pF f=1MHz,V =0V t R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.04 - Rev.A 0.80.1 1.60.2 0.1Min 1.80.2 5.50.2 0.7 00.1 3.50.05 1.750.1 0.7 8.00.2 1.3EMZC6.8N Data Sheet 10 Ta=125 10 10000 f=1MH Ta=75 Ta=75 Ta=25 1 1000 Ta=125 Ta=25 Ta=-25 Ta=-25 100 0.1 10 1 0.01 00.51 1.5 22.53 3.5 0 0.5 1 1.5 2 2.5 3 3.5 5 5.5 6 6.5 7 7.5 8 ZENER VOLTAGEVz(V) REVERSE VOLTAGEVR(V) REVERSE VOLTAGE:VR(V) Vz-Iz CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS 10 10 7 9 Ta=25 Ta=25 9 Ta=25 VR=3.5V IZ=5mA 8 f=1MHz 8 6.9 n=30pcs n=30pcs VR=0V 7 7 n=10pcs 6 6 6.8 5 5 4 AVE:2.87pF 4 6.7 AVE:6.752V 3 3 2 AVE:0.334nA 2 6.6 1 1 0 0 6.5 Vz DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 100 10 1 0.1 1 10 ZENER CURRENT:Iz(mA) Zz-Iz CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/2 2011.04 - Rev.A ZENER VOLTAGE:Vz(V) DYNAMIC IMPEDANCE:Zz() ZENER CURRENT:Iz(mA) REVERSE CURRENT:IR(nA) REVERSE CURRENT:IR(nA) CAPACITANCE BETWEEN CAPACITANCE BETWEEN TERMINALS:Ct(pF) TERMINALS:Ct(pF)