X-On Electronics has gained recognition as a prominent supplier of FMA3AT148 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. FMA3AT148 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

FMA3AT148 ROHM

Name: FMA3AT148
Brand: ROHM
SKU: FMA3AT148_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

FMA3AT148 Bipolar Transistors - Pre-Biased

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Part No.	FMA3AT148
Manufacturer:	ROHM
Category:	Bipolar Transistors - Pre-Biased
Description:	Trans Digital BJT PNP 50V 100mA 5-Pin SMT T/R
Datasheet:	FMA3AT148 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.2117 ea
Line Total: USD 1.06

Availability - 0

MOQ: 5 Multiples: 5
Pack Size: 5

FMA3AT148 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Wed. 09 Jul to Fri. 11 Jul MOQ : 1 Multiples : 1	1 : USD 0.465 10 : USD 0.3762 100 : USD 0.2357 1000 : USD 0.1342 3000 : USD 0.1155 9000 : USD 0.1078 24000 : USD 0.1078 45000 : USD 0.1023

0 Ship by Wed. 09 Jul to Fri. 11 Jul MOQ : 5 Multiples : 5	5 : USD 0.2117 25 : USD 0.1425 100 : USD 0.1289 165 : USD 0.0977 445 : USD 0.0923

0 Ship by Fri. 11 Jul to Thu. 17 Jul MOQ : 164 Multiples : 1	164 : USD 1.5889

We are delighted to provide the FMA3AT148 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FMA3AT148 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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Additional Infomation About Product

EMA3 / UMA3N / FMA3A Datasheet Emitter common(dual digital transistor) llOutline Parameter DTr1 and DTr2 SOT-553 SOT-353 V -50V CEO I -100mA C R 4.7k 1 EMA3 UMA3N (EMT5) (UMT5) SOT-25 llFeatures 1)Two DTA143T chips in a EMT or UMT or SMT package. FMA3A 2)Mounting cost and area can be cut in half. (SMT5) llInner circuit EMA3 / UMA3N FMA3A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-553 EMA3 1616 T2R 180 8 8000 A3 (EMT5) SOT-353 UMA3N 2021 TR 180 8 3000 A3 (UMT5) SOT-25 FMA3A 2928 T148 180 8 3000 A3 (SMT5) www.rohm.com 1/6 20151019 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMA3 / UMA3N / FMA3A Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Collector-base voltage -50 V CBO V Collector-emitter voltage -50 V CEO V Emitter-base voltage -5 V EBO I Collector current -100 mA C *1*2 P EMA3 150 D *1*2 P Power dissipation UMA3N 150 mW/Total D *1*3 FMA3A P 300 D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV Emitter-base breakdown voltage I = -50A -5 - - V EBO E I V = -50V Collector cut-off current - - -500 nA CBO CB I V = -4V Emitter cut-off current - - -500 nA EBO EB Collector-emitter saturation voltage V I = -5mA, I = -0.25mA - - -300 mV C B CE(sat) h V = -5V, I = -1mA DC current gain 100 250 600 - FE CE C R Input resistance - 3.29 4.7 6.11 k 1 V = -10V, I = 5mA, CE E *4 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. *4 Characteristics of built-in transistor. www.rohm.com 2/6 2015 ROHM Co., Ltd. All rights reserved. 20151019 - Rev.002

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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Manufacturer ROHM ROHM
Product Category Bipolar Transistors - Pre-Biased Bipolar Transistors - Pre-Biased
RoHS - XON Y Y
Configuration Dual Common Emitter Dual Common Emitter
Transistor Polarity Pnp Pnp
Typical Input Resistor 4.7 Kohms 4.7 Kohms
Mounting Style Smd/Smt Smd/Smt
Package / Case SC - 74 - 5 SC - 74 - 5
DC Collector/Base Gain hFE Min 100 100
Collector- Emitter Voltage VCEO Max 50 V 50 V
Continuous Collector Current 100 mA 100 mA
Peak DC Collector Current 100 mA 100 mA
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Series Fma3at Fma3at
Packaging Reel Reel
Brand Rohm Semiconductor Rohm Semiconductor
Factory Pack Quantity : 3000 3000
Height 1.1 mm 1.1 mm
Length 2.9 mm 2.9 mm
Width 1.6 mm 1.6 mm
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type Bjts - Bipolar Transistors - Pre - Biased Bjts - Bipolar Transistors - Pre - Biased
Subcategory Transistors Transistors
Taric 8541290000 8541290000