FMG3AT148 ROHM

FMG3AT148 electronic component of ROHM
FMG3AT148 ROHM
FMG3AT148 Bipolar Transistors - Pre-Biased
FMG3AT148  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FMG3AT148 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. FMG3AT148 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

Part No. FMG3AT148
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased DUAL NPN 50V 100MA
Datasheet: FMG3AT148 Datasheet (PDF)
Price (USD)
5: USD 0.1234 ea
Line Total: USD 0.62 
Availability : 460
  
Ship by Mon. 17 Nov to Fri. 21 Nov
QtyUnit Price
5$ 0.1234
50$ 0.0964
150$ 0.0828
500$ 0.0546
3000$ 0.0437
6000$ 0.041

Availability 460
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.1234
50$ 0.0964
150$ 0.0828
500$ 0.0546
3000$ 0.0437
6000$ 0.041


Availability 450
Ship by Thu. 13 Nov to Mon. 17 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6437
10$ 0.3963
100$ 0.2335
500$ 0.1727
1000$ 0.1562
3000$ 0.1342
6000$ 0.1232
9000$ 0.1144
24000$ 0.1133


Availability 1844
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 1130
Multiples : 1
QtyUnit Price
1130$ 0.2302
1172$ 0.2219
1211$ 0.2148


Availability 64756
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 579
Multiples : 1
QtyUnit Price
579$ 0.4862
1026$ 0.2535
2000$ 0.2275
6000$ 0.2087
12000$ 0.1787
24000$ 0.1688

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
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Width
Cnhts
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Mxhts
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Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FMG3AT148 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FMG3AT148 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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EMG3 / UMG3N / FMG3A Datasheet Emitter common (dual digital transistor) llOutline Parameter DTr1 and DTr2 SOT-553 SOT-353 V 50V CEO I 100mA C R 4.7k 1 EMG3 UMG3N (EMT5) (UMT5) SOT-25 llFeatures 1)Two DTC143T chips in a EMT or UMT or SMT package. FMG3A 2)Mounting cost and area can be cut in half. (SMT5) llInner circuit EMG3 / UMG3N FMG3A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-553 EMG3 1616 T2R 180 8 8000 G3 (EMT5) SOT-353 UMG3N 2021 TR 180 8 3000 G3 (UMT5) SOT-25 FMG3A 2928 T148 180 8 3000 G3 (SMT5) www.rohm.com 1/6 20151019 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMG3 / UMG3N / FMG3A Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO I Collector current 100 mA C *1*2 P EMG3 150 D *1*2 P Power dissipation UMG3N 150 mW/Total D *1*3 FMG3A P 300 D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E I V = 50V Collector cut-off current - - 500 nA CBO CB I V = 4V Emitter cut-off current - - 500 nA EBO EB Collector-emitter saturation voltage V I = 5mA, I = 0.25mA - - 300 mV C B CE(sat) h V = 5V, I = 1mA DC current gain 100 250 600 - FE CE C R Input resistance - 3.29 4.7 6.11 k 1 V = 10V, I = -5mA, CE E *4 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. *4 Characteristics of built-in transistor. www.rohm.com 2/6 2015 ROHM Co., Ltd. All rights reserved. 20151019 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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