Product Information

FMW3T148

FMW3T148 electronic component of ROHM

Datasheet
ROHM Semiconductor Bipolar Transistors - Pre-Biased 120V 50mA SMT Dual NPN Digital

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9621 ea
Line Total: USD 0.96

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 3000
Multiples : 3000

Stock Image

FMW3T148
ROHM

3000 : USD 0.1667
9000 : USD 0.1644
24000 : USD 0.1622
45000 : USD 0.1598

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Mounting Style
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Series
Packaging
Emitter- Base Voltage Vebo
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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FMW3 / FMW4 / IMX8 Transistors General purpose (dual transistors) FMW3 / FMW4 / IMX8 External dimensions (Units : mm) Features 1) Two 2SC3906K chips in an SMT package. FMW3 2) High breakdown voltage. FMW4 1.6 Absolute maximum ratings (Ta = 25C) 2.8 Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V 0.3to0.6 Collector current IC 50 mA Each lead has same dimensions ROHM : SMT5 Power dissipation Pc 300(TOTAL) mW EIAJ : SC-74A Junction temperature Tj 150 C Storage temperature Tstg 55~+150 C 200mW per element must not be exceeded. IMX8 Package, marking, and packaging specifications Part No. FMW3 FMW4 IMX8 Package SMT5 SMT5 SMT6 1.6 Marking W3 W4 X4 Code T148 T148 T108 2.8 Basic ordering unit (pieces) 3000 3000 3000 0.3to0.6 Each lead has same dimensions ROHM : SMT6 Circuit diagrams EIAJ : SC-74 FMW3 FMW4 IMX8 Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 120 V IC=50 A Collector-emitter breakdown voltage BVCEO 120 V IC=1mA Emitter-base breakdown voltage BVEBO 5 V IE=50 A Collector cutoff current ICBO 0.5 A VCB=100V Emitter cutoff current IEBO 0.5 A VEB=4V DC current transfer ratio hFE 180 820 VCE=6V, IC=2mA Transition frequency fT 140 MHz VCE=12V, IE=2mA, f=100MHz Collector-emitter saturation voltage VCE(sat) 0.5 V IC/IB=10mA/1mA Transition frequency of the device 0.15 0.3 0.15 0.3 (2) ( ) (5) (6) (1) 4 0to0.1 0to0.1 ( ) (3) (2) 1 (5) (4) (3) 0.95 0.95 0.95 0.95 0.8 1.9 0.8 1.9 2.9 2.9 1.1 1.1 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party s intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer s right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies toobjectiv criteria or aninforme (by MITI clause) on the basis ofcatch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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RHE
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ROHM Semiconductor

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