Product Information

IMD1AT108

IMD1AT108 electronic component of ROHM

Datasheet
Bipolar Transistors - Pre-Biased PNP/NPN 50V 100MA

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0924 ea
Line Total: USD 277.2

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.1203
6000 : USD 0.1113
12000 : USD 0.1113
15000 : USD 0.1113
45000 : USD 0.1113

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Peak DC Collector Current
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
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IMD1A Transistors Power management (dual digital transistors) IMD1A External dimensions (Units : mm) Features 1) Both the DTA124T chip and DTC124T chip in a SMT package. Absolute maximum ratings (Ta=25C) 1.6 Parameter Symbol Limits Unit Collector-base voltage VCBO 50 V 2.8 Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V 0.3Min. Collector current IC 100 mA Each lead has same dimensions Collector power dissipation Pc 300(TOTAL) mW Junction temperature Tj 150 C ROHM : SMT6 Storage temperature Tstg 55~+150 C EIAJ : SC-74 200mW per element must not be exceeded. PNP type negative symbols have been omitted. Package, marking, and packaging specifications Type IMD1A Package SMT6 Marking D1 Code T108 Basic ordering unit (pieces) 3000 Equivalent circuit (4) (5) (6) R1 R1 (3) (2) (1) Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 50 V IC=50 A Collector-emitter breakdown voltage BVCEO 50 V IC=1mA BVEBO 5 V IE=50 A Emitter-base breakdown voltage ICBO 0.5 A VCB=50V Collector cutoff current IEBO 0.5 A VEB=4V Emitter cutoff current Collector-emitter saturation voltage VCE(sat) 0.3 V IC/IB=5mA/0.5mA hFE 100 250 600 VCE=5V, IC=1mA DC current transfer ratio fT 250 VCE=10V, IE=5mA, f=100MHz Transition frequency MHz Input resistance R1 15.4 22 28.6 k Transition frequency of mounted transistor. PNP type negative symbols have been omitted. 0.15 0.3 ( ) (4) (5) 6 0~0.1 (3) (2) (1) 0.95 0.95 0.8 1.9 1.1 2.9X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for Bipolar Transistors - Pre-Biased category: Click to view products by ROHM manufacturer: Other Similar products are found below : MMUN2217LT1G FP101-TL-E RN1607(TE85L,F) DRC9A14E0L DTA124GKAT146 DTA144WETL DTA144WKAT146 DTC113EET1G DTC115TETL DTC115TKAT146 DTC124TETL DTC144ECA-TP DTC144VUAT106 MUN5241T1G BCR158WH6327XTSA1 NSBA114TDP6T5G NSBA143TF3T5G NSBA143ZF3T5G NSBC114EF3T5G NSBC114YF3T5G NSBC123TF3T5G NSBC143TF3T5G NSVMUN2212T1G NSVMUN5111DW1T3G NSVMUN5314DW1T3G NSVUMC2NT1G SMMUN2134LT1G SMUN2212T1G SMUN5235T1G SMUN5330DW1T1G SSVMUN5312DW1T2G 2SC3650-TD-E RN1303(TE85L,F) RN4605(TE85L,F) BCR135SH6327XT TTEPROTOTYPE79 UMC3NTR DTA113EET1G EMA2T2R EMH15T2R SDTA114YET1G SMMUN2111LT3G SMMUN2113LT1G SMMUN2114LT1G SMMUN2211LT3G SMUN2214T3G SMUN5113DW1T1G SMUN5335DW1T1G NSBA114YF3T5G NSBC114TF3T5G

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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