X-On Electronics has gained recognition as a prominent supplier of IMH15AT110 bipolar transistors - pre-biased across the USA, India, Europe, Australia, and various other global locations. IMH15AT110 bipolar transistors - pre-biased are a product manufactured by ROHM. We provide cost-effective solutions for bipolar transistors - pre-biased, ensuring timely deliveries around the world.

IMH15AT110

Name: IMH15AT110
Brand: ROHM
SKU: IMH15AT110_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

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Part No.	IMH15AT110
Manufacturer:	ROHM
Category:	Bipolar Transistors - Pre-Biased
Description:	Transistors Switching - Resistor Biased DUAL NPN 50V 100MA
Datasheet:	IMH15AT110 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.3371 ea
Line Total: USD 1.34

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

IMH15AT110 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Thu. 06 Jun to Mon. 10 Jun MOQ : 3000 Multiples : 3000	3000 : USD 0.092 9000 : USD 0.0816 24000 : USD 0.0782 45000 : USD 0.0747 99000 : USD 0.0725

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Additional Infomation About Product

EMH15 / IMH15A Datasheet General purpose (dual digital transistor) llOutline Parameter DTr1 and DTr2 SOT-563 SOT-457 V 50V CEO I 100mA C R 47k 1 EMH15 IMH15A (EMT6) (SMT6) llFeatures llInner circuit 1)Two DTC144T chips in a EMT or SMT EMH15 package. 2)Mounting possible with EMT3 or SMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. IMH15A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMH15 1616 T2R 180 8 8000 H15 (EMT6) SOT-457 IMH15A 2928 T110 180 8 3000 H15 (SMT6) www.rohm.com 1/5 20151008 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. Not Recommended for New DesignsEMH15 / IMH15A Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO I Collector current 100 mA C *1*2 P EMH15 150 D Power dissipation mW/Total *1*3 P IMH15A 300 D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E I V = 50V Collector cut-off current - - 500 nA CBO CB I V = 4V Emitter cut-off current - - 500 nA EBO EB Collector-emitter saturation voltage V I = 10mA, I = 1mA - - 300 mV CE(sat) C B h V = 5V, I = 1mA DC current gain 100 250 600 - FE CE C R Input resistance - 32.9 47 61.1 k 1 V = 10V, I = -5mA, CE E *4 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. *4 Characteristics of built-in transistor. www.rohm.com 2/5 2015 ROHM Co., Ltd. All rights reserved. 20151008 - Rev.002 Not Recommended for New Designs

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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