X-On Electronics has gained recognition as a prominent supplier of IMH8AT108 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. IMH8AT108 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

IMH8AT108 ROHM

IMH8AT108 electronic component of ROHM
IMH8AT108 ROHM
IMH8AT108 Bipolar Transistors - Pre-Biased
IMH8AT108 Semiconductors

Images are for reference only
See Product Specifications
Part No. IMH8AT108
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: ROHM Semiconductor Bipolar Transistors - Pre-Biased DUAL NPN 50V 100MA
Datasheet: IMH8AT108 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0544 ea
Line Total: USD 163.2 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000

 IMH8AT108 More Buying Options & Price Grid(s)

Availability Price Quantity
0
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.0544
6000 : USD 0.0534
9000 : USD 0.0529
12000 : USD 0.0525
15000 : USD 0.0513

0
Ship by Wed. 02 Jul to Fri. 04 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.3322
9000 : USD 0.3311
24000 : USD 0.33

0
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 65
Multiples : 1
65 : USD 0.4318
100 : USD 0.1373

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Power Dissipation
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IMH8AT108 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IMH8AT108 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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Additional Infomation About Product

UMH8N / IMH8A Datasheet General purpose (dual digital transistor) llOutline Parameter DTr1 and DTr2 SOT-363 SOT-457 V 50V CEO I 100mA C R 10k 1 UMH8N IMH8A (UMT6) (SMT6) llFeatures llInner circuit 1)Two DTC114T chips in a UMT or SMT UMH8N package. 2)Mounting possible with UMT3 or SMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. IMH8A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-363 UMH8N 2021 TR 180 8 3000 H8 (UMT6) SOT-457 IMH8A 2928 T108 180 8 3000 H8 (SMT6) www.rohm.com 1/5 20151008 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. Not Recommended for New DesignsUMH8N / IMH8A Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO I Collector current 100 mA C *1*2 P UMH8N 150 D Power dissipation mW/Total *1*3 P IMH8A 300 D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E I V = 50V Collector cut-off current - - 500 nA CBO CB I V = 4V Emitter cut-off current - - 500 nA EBO EB Collector-emitter saturation voltage V I = 10mA, I = 1mA - - 300 mV CE(sat) C B h V = 5V, I = 1mA DC current gain 100 250 600 - FE CE C R Input resistance - 7 10 13 k 1 V = 10V, I = -5mA, CE E *4 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. *4 Characteristics of built-in transistor. www.rohm.com 2/5 2015 ROHM Co., Ltd. All rights reserved. 20151008 - Rev.002 Not Recommended for New Designs

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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