Product Information

IMH8AT108

IMH8AT108 electronic component of ROHM

Datasheet
ROHM Semiconductor Bipolar Transistors - Pre-Biased DUAL NPN 50V 100MA

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0883 ea
Line Total: USD 264.9

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.1079
9000 : USD 0.1
12000 : USD 0.1
30000 : USD 0.1
45000 : USD 0.1

0 - WHS 2


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 0.5535
10 : USD 0.4527
100 : USD 0.2859
500 : USD 0.2168
1000 : USD 0.1696
3000 : USD 0.1454
9000 : USD 0.1419
24000 : USD 0.1384
45000 : USD 0.1349

0 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 65
Multiples : 1
65 : USD 0.4318
100 : USD 0.1373

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Power Dissipation
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
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UMH8N / IMH8A Datasheet General purpose (dual digital transistor) llOutline Parameter DTr1 and DTr2 SOT-363 SOT-457 V 50V CEO I 100mA C R 10k 1 UMH8N IMH8A (UMT6) (SMT6) llFeatures llInner circuit 1)Two DTC114T chips in a UMT or SMT UMH8N package. 2)Mounting possible with UMT3 or SMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. IMH8A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-363 UMH8N 2021 TR 180 8 3000 H8 (UMT6) SOT-457 IMH8A 2928 T108 180 8 3000 H8 (SMT6) www.rohm.com 1/5 20151008 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. Not Recommended for New DesignsUMH8N / IMH8A Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO I Collector current 100 mA C *1*2 P UMH8N 150 D Power dissipation mW/Total *1*3 P IMH8A 300 D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E I V = 50V Collector cut-off current - - 500 nA CBO CB I V = 4V Emitter cut-off current - - 500 nA EBO EB Collector-emitter saturation voltage V I = 10mA, I = 1mA - - 300 mV CE(sat) C B h V = 5V, I = 1mA DC current gain 100 250 600 - FE CE C R Input resistance - 7 10 13 k 1 V = 10V, I = -5mA, CE E *4 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. *4 Characteristics of built-in transistor. www.rohm.com 2/5 2015 ROHM Co., Ltd. All rights reserved. 20151008 - Rev.002 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
LAPIS Semiconductor
RHE
RHM
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ROHM Semiconductor

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