KDZVTFTR9.1B ROHM

KDZVTF9.1B Zener Diode (AEC-Q101 qualified) Data sheet Outline P 1000 mW D Features Inner Circuit High reliability Small power mold type Application Packaging Specifications Packing Embossed Tape Voltage regulation Reel Size(mm) 180 Taping Width(mm) 8 Quantity(pcs) 3000 Structure Taping Code TR Silicon Epitaxial Planar Marking SB Absolute Maximum Ratings (T = 25) a Parameter Symbol Limits Unit P Power dissipation 1000 mW D T Junction temperature 150 j T Storage temperature -55 150 stg www.rohm.com 1/6 2019- ROHM Co., Ltd. All rights reserved. 2019/04/17 Rev.005KDZVTF Series Data sheet Electrical Characteristics (T = 25C) a Symbol (1) Reverse Current:I (A) V Rank(V) Zener Voltage:V (V) R Z Z I (mA) V (V) MIN. MAX. MAX. Z R 2.0 2.000 2.240 40 200 0.5 2.2 2.200 2.450 40 200 0.7 2.4 2.400 2.700 40 200 1.0 2.7 2.700 3.100 40 200 1.0 3.0 3.000 3.400 40 100 1.0 3.3 3.300 3.700 40 80 1.0 3.6 3.600 4.000 40 60 1.0 3.9 3.900 4.400 40 40 1.0 4.3 4.300 4.800 40 20 1.0 4.7 4.700 5.200 40 20 1.0 5.1 5.100 5.700 40 20 1.0 5.6 5.600 6.300 40 20 1.5 6.2 6.200 7.000 40 20 3.0 6.8 6.800 7.700 40 20 3.5 7.5 7.500 8.400 40 20 4.0 8.2 8.200 9.300 40 20 5.0 9.1 9.100 10.200 40 20 6.0 10 10.000 11.200 40 10 7.0 11 11.000 12.300 20 10 8.0 12 12.000 13.500 20 10 9.0 13 13.300 15.000 20 10 10.0 15 14.700 16.500 20 10 11.0 16 16.200 18.300 20 10 12.0 18 18.000 20.300 20 10 13.0 20 20.000 22.400 20 10 15.0 22 22.000 24.500 10 10 17.0 24 24.000 27.600 10 10 19.0 27 27.000 30.800 10 10 21.0 30 30.000 34.000 10 10 23.0 33 33.000 37.000 10 10 25.0 36 36.000 40.000 10 10 27.0 Note(1) V test time is 40ms. Z Markings V Rank(V) V Rank(V) Marking Marking Z Z 2.0 AB 9.1 SB 2.2 BB 10 TB 2.4 CB 11 UB 2.7 DB 12 VB 3.0 EB 13 WB 3.3 FB 15 XB 3.6 GB 16 YB 3.9 HB 18 ZB 4.3 JB 20 AD 4.7 KB 22 BD 5.1 LB 24 CD 5.6 MB 27 DD 6.2 NB 30 ED 6.8 PB 33 FD 7.5 QB 36 GD 8.2 RB www.rohm.com 2/6 2019- ROHM Co., Ltd. All rights reserved. 2019/04/17 Rev.005