MCR01MRTF2202 ROHM

MCR01MRTF2202 electronic component of ROHM Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MCR01MRTF2202 across the USA, India, Europe, Australia, and various other global locations. MCR01MRTF2202 are a product manufactured by ROHM. We provide cost-effective solutions for MCR01MRTF2202, ensuring timely deliveries around the world.

Part No. MCR01MRTF2202
Manufacturer: ROHM
Category: Unclassified
Description: MCR01MRTF2202
High power MOSFET, 16V, 200A, FullPAK (D2PAK) package, low gate charge.
Datasheet:
Price (USD)
10000: USD 0.0113 ea
Line Total: USD 113 
Availability : 0
  
QtyUnit Price
10000$ 0.0113

Availability 0
Ship by Wed. 01 Oct to Tue. 07 Oct
MOQ : 10000
Multiples : 10000
QtyUnit Price
10000$ 0.0113

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Packaging
Brand
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MCR01MRTF2202 from our ROHM manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MCR01MRTF2202 and other electronic components in the ROHM manufacturer and beyond.

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The MCR01MRTF2202 is a low on-resistance (RDS(ON)) power MOSFET from ROHM Semiconductor. It is a logic level N-channel enhancement-mode device designed to withstand up to 20V drain-source voltage and a total channel maximum power dissipation of 1.2W. The low RDS(ON) of the device allows it to be used as a load switch or an amplifier in various applications. The device is constructed with a trench cell structure and has a low gate charge (QG). This increases the overall efficiency of the circuit. The MCR01MRTF2202 also has an extremely low on-resistance in saturation, and is capable of withstanding high voltage pulsing.

RHE
RHM
ROHM Semicon
ROHM Semiconductor
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