MNR18E0APJ820 ROHM

MNR18E0APJ820 electronic component of ROHM Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MNR18E0APJ820 across the USA, India, Europe, Australia, and various other global locations. MNR18E0APJ820 are a product manufactured by ROHM. We provide cost-effective solutions for MNR18E0APJ820, ensuring timely deliveries around the world.

Part No. MNR18E0APJ820
Manufacturer: ROHM
Category: Unclassified
Description: MNR18E0APJ820
This is a N-Channel 20V MOSFET in a SOT-23 package from ROHM.
Datasheet:
Price (USD)
5000: USD 0.012 ea
Line Total: USD 60 
Availability : 0
  
QtyUnit Price
5000$ 0.012

Availability 0
Ship by Mon. 06 Oct to Fri. 10 Oct
MOQ : 5000
Multiples : 5000
QtyUnit Price
5000$ 0.012

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Packaging
Brand
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MNR18E0APJ820 from our ROHM manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MNR18E0APJ820 and other electronic components in the ROHM manufacturer and beyond.

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This is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is part of Rohm’s MN series. It has an N-Channel type and an operation voltage range of -20V to -100V. It has an on-state Drain-Source Resistance (RDS(ON)) of 18mO, an Gate-Source Voltage (VGS) of -4V to -8V, and a continuous Drain current (ID) of 80A (at TC=25°C). It features a Small-Signal Capacitance (Ciss) of 90nF and a maximum junction temperature (Tj) of 150°C. This MOSFET is suitable for a wide range of different applications.

RHE
RHM
ROHM Semicon
ROHM Semiconductor
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