PTZTE2516B is a high-end IGBT transistor made by ROHM. It is a power semiconductor device that combines the high-speed switching of a power MOSFET with the low losses of an insulated gate bipolar transistor (IGBT). The PTZTE2516B is a forward converter IGBT transistor with a rated collector current of 25A and a rated collector emitter voltage of 1600V. It has high switching speeds, low on-state voltage drop, low drive power loss and fast soft recovery diode. The chip also features an internal temperature monitoring function for over-temperature protection. It is well-suited for use in high-power inverter and converter designs in automotive, industrial and consumer power conversion applications.