QS8J2TR ROHM

Hot QS8J2TR electronic component of ROHM
QS8J2TR ROHM
QS8J2TR MOSFETs
QS8J2TR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of QS8J2TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. QS8J2TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. QS8J2TR
Manufacturer: ROHM
Category: MOSFETs
Description: Mosfet Array 2 P-Channel (Dual) 12V 4A 550mW Surface Mount TSMT8
Datasheet: QS8J2TR Datasheet (PDF)
Price (USD)
1: USD 0.4642 ea
Line Total: USD 0.46 
Availability : 95
  
Ship by Thu. 21 Aug to Tue. 26 Aug
QtyUnit Price
1$ 0.4642
10$ 0.4532
30$ 0.4448
100$ 0.2947

Availability 95
Ship by Thu. 21 Aug to Tue. 26 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.4642
10$ 0.4532
30$ 0.4448
100$ 0.2947


Availability 1493
Ship by Tue. 12 Aug to Thu. 14 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.5625
10$ 0.9456
100$ 0.5896
500$ 0.484
1000$ 0.4455
3000$ 0.3795


Availability 2910
Ship by Thu. 14 Aug to Wed. 20 Aug
MOQ : 232
Multiples : 1
QtyUnit Price
232$ 1.1237


Availability 213
Ship by Thu. 14 Aug to Wed. 20 Aug
MOQ : 161
Multiples : 1
QtyUnit Price
161$ 1.618

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Series
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the QS8J2TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QS8J2TR and other electronic components in the MOSFETs category and beyond.

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QS8J2 Datasheet -12V Pch + Pch Middle Power MOSFET llOutline TSMT8 V -12V DSS R (Max.) 36m DS(on) I 4A D P 1.5W D llFeatures llInner circuit 1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S protection diode. 4) Small surface mount package(TSMT8) 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking J02 llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage -12 V DSS Continuous drain current I 4 A D *1 I Pulsed drain current 12 A D,pulse V Gate - Source voltage 10 V GSS total 1.5 *2 P D Power dissipation element 1.25 W *3 P total 0.7 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.002 QS8J2 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - 83.3 *2 R thJA Thermal resistance, junction - ambient element - - 100 /W *3 R total - - 178 thJA llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -12 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -21.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -12V, V = 0V - - -1 A DSS DS GS drain current Gate - Source I V = 0V, V = 10V - - 10 A GSS DS GS leakage current Gate threshold V V = -6V, I = -1mA -0.3 - -1.0 V GS(th) DS D voltage V I = -1mA GS(th) D Gate threshold voltage - 2.4 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -4A - 26 36 GS D V = -2.5V, I = -2A - 36 50 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.8V, I = -2A - 46 69 GS D V = -1.5V, I = -0.8A - 66 132 GS D R Gate input resistance f = 1MHz, open drain - 15 - G Forward Transfer *4 Y V = -6V, I = -4A 5.5 - - S fs DS D Admittance www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/11 20150730 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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