QSH29TR ROHM

QSH29 Dual digital transistors Datasheet llOutline Parameter DTr1 and DTr2 SOT-457T V 6010V CEO SC-95 I 500mA C R 10k TSMT6 llFeatures llInner circuit 1)Low collector saturation voltage, typically V =100mV for Ic/I =100mA/1mA(Typ.) CE(sat) B 2)High current gain, minimum h =500mA for V =5V, Ic=200mA FE CE 3)Built in Zener diode for protection against surges when connected to inductive load. llApplication DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-457T QSH29 2928 TR 180 8 3000 H29 (TSMT6) www.rohm.com 1/4 20161118 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. QSH29 Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Collector-base voltage 6010 V CBO V Collector-emitter voltage 6010 V CEO V Emitter-base voltage 5 V EBO I 500 mA C Collector current *1 I 1 A CP *2*3 P Power dissipation 1.25 W/Total D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - 70 V CBO C voltage Collector-emitter breakdown BV I = 50A 50 - 70 V CEO C voltage BV I = 720A Emitter-base breakdown voltage 5.0 - - V EBO E I Collector cut-off current V = 40V - - 500 nA CBO CB I V = 4V Emitter cut-off current 300 - 580 A EBO EB Collector-emitter saturation voltage V I = 100mA, I = 1mA - 100 300 mV CE(sat) C B h DC current gain V = 5V, I = 200mA 500 - - - FE CE C Emitter-base resistance R - 7 10 13 k *1 Pw=10ms single pulse. *2 Each terminal mounted on a ceramic board. *3 0.9W per element must not be exceeded. www.rohm.com 2/4 2016 ROHM Co., Ltd. All rights reserved. 20161118 - Rev.001