QSH29TR ROHM

QSH29TR electronic component of ROHM
QSH29TR ROHM
QSH29TR Bipolar Transistors - Pre-Biased
QSH29TR Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of QSH29TR Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. QSH29TR Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

Part No. QSH29TR
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased DUAL DIGI TRNSISTR
Datasheet: QSH29TR Datasheet (PDF)
Price (USD)
835: USD 0.3117 ea
Line Total: USD 260.27 
Availability : 1295
  
Ship by Wed. 01 Oct to Tue. 07 Oct
QtyUnit Price
835$ 0.3117
866$ 0.3006
1000$ 0.2907

 QSH29TR More Buying Options & Price Grid(s)
Availability 2282
Ship by Mon. 29 Sep to Wed. 01 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.35
10$ 0.8148
100$ 0.506
500$ 0.4103
1000$ 0.3806
3000$ 0.3399
6000$ 0.3289
9000$ 0.3157

Availability 2536
Ship by Wed. 01 Oct to Tue. 07 Oct
MOQ : 167
Multiples : 1
QtyUnit Price
167$ 1.56
265$ 0.9815
500$ 0.65
1000$ 0.6237

Availability 1295
Ship by Wed. 01 Oct to Tue. 07 Oct
MOQ : 835
Multiples : 1
QtyUnit Price
835$ 0.3117
866$ 0.3006
1000$ 0.2907

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Maximum Operating Temperature
Series
Packaging
Emitter- Base Voltage Vebo
Brand
Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the QSH29TR from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QSH29TR and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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Additional Infomation About Product

QSH29 Dual digital transistors Datasheet llOutline Parameter DTr1 and DTr2 SOT-457T V 6010V CEO SC-95 I 500mA C R 10k TSMT6 llFeatures llInner circuit 1)Low collector saturation voltage, typically V =100mV for Ic/I =100mA/1mA(Typ.) CE(sat) B 2)High current gain, minimum h =500mA for V =5V, Ic=200mA FE CE 3)Built in Zener diode for protection against surges when connected to inductive load. llApplication DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-457T QSH29 2928 TR 180 8 3000 H29 (TSMT6) www.rohm.com 1/4 20161118 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. QSH29 Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Collector-base voltage 6010 V CBO V Collector-emitter voltage 6010 V CEO V Emitter-base voltage 5 V EBO I 500 mA C Collector current *1 I 1 A CP *2*3 P Power dissipation 1.25 W/Total D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - 70 V CBO C voltage Collector-emitter breakdown BV I = 50A 50 - 70 V CEO C voltage BV I = 720A Emitter-base breakdown voltage 5.0 - - V EBO E I Collector cut-off current V = 40V - - 500 nA CBO CB I V = 4V Emitter cut-off current 300 - 580 A EBO EB Collector-emitter saturation voltage V I = 100mA, I = 1mA - 100 300 mV CE(sat) C B h DC current gain V = 5V, I = 200mA 500 - - - FE CE C Emitter-base resistance R - 7 10 13 k *1 Pw=10ms single pulse. *2 Each terminal mounted on a ceramic board. *3 0.9W per element must not be exceeded. www.rohm.com 2/4 2016 ROHM Co., Ltd. All rights reserved. 20161118 - Rev.001

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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