R5007FNX Datasheet Nch 500V 7A Power MOSFET llOutline V 500V DSS R (Max.) 1.3 DS(on) TO-220FM I 7A D P 43W D llInner circuit llFeatures 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (V ) guaranteed to GSS be 30V. 5) Drive circuits can be simple. 6) Pb-free lead plating RoHS compliant llPackaging specifications Packing Bulk Reel size (mm) - llApplication Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 500 Taping code - Marking R5007FNX llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 500 V DSS *1 T = 25C I 7 A C D Continuous drain current *1 T = 100C I 3.4 A C D *2 I Pulsed drain current 28 A DP V Gate - Source voltage 30 V GSS *3 I Avalanche current, single pulse 3.5 A AS *3 E Avalanche energy, single pulse 3.2 mJ AS *4 E Avalanche energy, repetitive 2.6 mJ AR Power dissipation (T = 25C) P 43 W c D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg Reverse diode dv/dt dv/dt 15 V/ns www.rohm.com 1/13 2016 ROHM Co., Ltd. All rights reserved. 20160324 - Rev.002 Not Recommended for New Designs R5007FNX Datasheet llAbsolute maximum ratings Parameter Symbol Conditions Values Unit V = 400V, I = 7A DS D Drain - Source voltage slope dv/dt 50 V/ns T = 125 j llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 2.85 /W thJC Thermal resistance, junction - ambient R - - 70 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 500 - - V (BR)DSS GS D voltage Drain - Source avalanche V V = 0V, I = 3.5A - 580 - V (BR)DS GS D breakdown voltage V = 500V, V = 0V DS GS Zero gate voltage T = 25C I - 1 100 A DSS j drain current T = 125C - - 10000 j Gate - Source leakage current I V = 30V, V = 0V - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 2 - 4 V GS(th) DS D V = 10V, I = 3.5A GS D Static drain - source *6 R T = 25C - 1.0 1.3 j DS(on) on - state resistance T = 125C - 1.98 - j R Gate resistance f = 1MHz, open drain - 7.3 - G www.rohm.com 2/13 2016 ROHM Co., Ltd. All rights reserved. 20160324 - Rev.002 Not Recommended for New Designs