R6011KNJ Datasheet Nch 600V 11A Power MOSFET llOutline TO-263S V 600V DSS SC-83 R (Max.) 0.39 DS(on) LPT(S) I 11A D P 124W D llInner circuit llFeatures 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 24 Type Switching Quantity (pcs) 1000 Taping code TL Marking R6011KNJ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 600 V DSS *1 Continuous drain current (T = 25C) I 11 A c D *2 I Pulsed drain current 33 A DP static 20 V V Gate - Source voltage GSS AC(f 1Hz) 30 V I Avalanche current, single pulse 1.8 A AS *3 E Avalanche energy, single pulse 210 mJ AS Power dissipation (T = 25C) P 124 W c D T Junction temperature 150 j Operating junction and storage temperature range T -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/12 20190603 - Rev.003 R6011KNJ Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 Thermal resistance, junction - case R - - 1.0 /W thJC *5 R Thermal resistance, junction - ambient - - 80 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage V = 600V, V = 0V DS GS Zero gate voltage I T = 25C - - 100 A DSS j drain current T = 125C - - 1000 j I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 3 - 5 V GS(th) DS D V = 10V, I = 3.8A GS D Static drain - source *6 R T = 25C - 0.34 0.39 DS(on) j on - state resistance T = 125C - 0.72 - j Gate resistance R f = 1MHz, open drain - 1.5 - G www.rohm.com 2/12 20190603 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.