R6030KNX Datasheet Nch 600V 30A Power MOSFET llOutline V 600V DSS R (Max.) 0.130 DS(on) TO-220FM I 30A D P 86W D llInner circuit llFeatures 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating RoHS compliant llPackaging specifications Packing Bulk Reel size (mm) - llApplication Tape width (mm) - Type Switching Basic ordering unit (pcs) 500 Taping code - Marking R6030KNX llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 600 V DSS *1 Continuous drain current (T = 25C) I 30 A c D *2 I Pulsed drain current 80 A DP static 20 V V Gate - Source voltage GSS AC(f 1Hz) 30 V I Avalanche current, single pulse 5.2 A AS *3 E Avalanche energy, single pulse 636 mJ AS Power dissipation (T = 25C) P 86 W c D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/12 2015 ROHM Co., Ltd. All rights reserved. 20151001 - Rev.001 R6030KNX Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 Thermal resistance, junction - case R - - 1.5 /W thJC R Thermal resistance, junction - ambient - - 70 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage V = 600V, V = 0V DS GS Zero gate voltage I T = 25C - - 100 A DSS j drain current T = 125C - - 1000 j I V = 20V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 3 - 5 V GS(th) DS D V = 10V, I = 14.5A GS D Static drain - source *5 R T = 25C - 0.115 0.130 DS(on) j on - state resistance T = 125C - 0.26 - j Gate resistance R f = 1MHz, open drain - 2.1 - G www.rohm.com 2/12 20151001 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.