Product Information

RCX081N20

RCX081N20 electronic component of ROHM

Datasheet
MOSFET 10V Drive Nch Power MOSFET

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2771 ea
Line Total: USD 1.28

412 - Global Stock
Ships to you between
Fri. 31 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
877 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 1.0726
10 : USD 0.8911
100 : USD 0.7179
500 : USD 0.4971
2500 : USD 0.4971
5000 : USD 0.4971
10000 : USD 0.4781
25000 : USD 0.477

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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RCX081N20 Nch 200V 8.0A Power MOSFET Datasheet l Outline V 200V DSS TO-220FM R (Max.) 770mW DS(on) I 8.0A D (3) P (2) 40W D (1) l l Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating RoHS compliant 6) 100% Avalanche tested lPackaging specifications Packaging Bulk Reel size (mm) - lApplication Tape width (mm) - Switching Power Supply Type Basic ordering unit (pcs) 500 Automotive Motor Drive Taping code - Automotive Solenoid Drive Marking RCX081N20 lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 200 V DSS *1 T = 25C I 8.0 A c D Continuous drain current *1 T = 100C A I 4.3 c D *2 Pulsed drain current I 32 A D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 5.17 mJ E AS *3 Avalanche current I 4.0 A AR T = 25C P 40 W c D Power dissipation T = 25C P 2.23 W a D T Junction temperature 150 C j Range of storage temperature T C -55 to +150 stg www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.08 - Rev.A 1/12Data Sheet RCX081N20 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 3.125 C/W Thermal resistance, junction - case thJC R Thermal resistance, junction - ambient - - 56 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 200 - - V (BR)DSS GS D V = 200V, V = 0V DS GS - - 10 T = 25C j Zero gate voltage drain current I mA DSS V = 200V, V = 0V DS GS - - 100 T = 125C j I V = 30V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.25 - 5.25 V GS (th) DS D V = 10V, I = 4.0A - 550 770 GS D Static drain - source *4 V = 10V, I = 4.0A R mW GS D DS(on) on - state resistance - 1090 1500 T = 125C j g V = 10V, I = 4.0A Forward transfer admittance 1.0 2.0 - S fs DS D www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.08 - Rev.A 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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