RD3S100CNTL1

RD3S100CN Datasheet Nch 190V 10A Power MOSFET llOutline TO-252 V 190V DSS R (Max.) 182m DS(on) I 10A D P 85W D llFeatures llInner circuit 1) Low on-resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating RoHS compliant llApplication llPackaging specifications Switching Power Supply Packing Embossed Tape Packing code TL1 Marking RD3S100CN Quantity (pcs) 2500 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 190 V DSS *1 Continuous drain current (T = 25C) I 10 A c D *2 Pulsed drain current I 40 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 5.0 A AS *3 Avalanche energy, single pulse E 8.33 mJ AS Power dissipation (T = 25C) P 85 W c D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/12 20190604 - Rev.004 RD3S100CN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - case R - - 1.46 /W thJC R Thermal resistance, junction - ambient - - 147 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 190 - - V (BR)DSS GS D voltage V = 190V, V = 0V DS GS Zero gate voltage I T = 25C - - 10 A DSS j drain current T = 125C - - 100 j I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 0.5 - 2.5 V GS(th) DS D V = 10V, I = 5A GS D T = 25C - 130 182 j Static drain - source *4 R T = 125C - 195 - m DS(on) j on - state resistance V = 4V, I = 5A GS D - 136 190 T = 25C j Gate resistance R f = 1MHz, open drain - 4.5 - G www.rohm.com 2/12 20190604 - Rev.004 2019 ROHM Co., Ltd. All rights reserved.