Product Information

RF081LAM2STR

RF081LAM2STR electronic component of ROHM

Datasheet
Rectifiers 200V Vr 1A Io Fast Recovery Diode
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4174 ea
Line Total: USD 0.42

7 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
7 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1
1 : USD 0.4174
10 : USD 0.299
100 : USD 0.1357
1000 : USD 0.1092
3000 : USD 0.0966
9000 : USD 0.0862
24000 : USD 0.0862
45000 : USD 0.0794
99000 : USD 0.0759

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Product
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif

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Additional Infomation About Product

Super Fast Recovery Diode RF081LAM2S Data Sheet lSeries lDimensions (Unit : mm) lLand Size Figure (Unit : mm) Standard Fast Recovery 0.10 2.0 0.17 0.05 2.500.20 (1) lApplications General rectification PMDTM lFeatures lStructure Cathode (2) 1) Low forward voltage 1.500.20 0.950.10 ROHM : PMDTM 2) Low switching loss JEDEC : SOD-128 : Manufacture Date 3) High current overload capacity Anode lTaping Dimensions (Unit : mm) lConstruction Silicon epitaxial planar type lAbsolute Maximum Ratings (T = 25C) l Parameter Symbol Conditions Limits Unit V Duty0.5 200 Repetitive peak reverse voltage V RM Reverse voltage V Direct reverse voltage 200 V R Glass epoxy board mounted, I T =123C Average forward rectified current 1.1 A o 60Hz half sin wave, resistive load 60Hz half sin wave, I Non-repetitive forward surge current 25 A FSM non-repetitive at T=25C j T Junction temperature - 150 C j T - Storage temperature -55 to +150 C stg lElectrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage V I =1A 0.75 0.84 0.98 V F F I V =200V Reverse current - - 10 mA R R I =0.5A, I =1A, Irr=0.25I Reverse recovery time trr - 12 25 ns F R R Thermal resistance R Junction to lead - - 25 C/W th(j-l) www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.09 - Rev.A 1/4 3.700.20 4.700.14 1.4 4.4 Data Sheet RF081LAM2S lElectrical Characteristic Curves 100 100000 T = 150 C j 10000 T = 125 C j T = 150 C j 10 1000 T = 125 C j T = 75 C j 100 1 T = 75 C j 10 T = 25 C j 0.1 1 T = 25 C j T = -40 C 0.1 j 0.01 T = -40 C j 0.01 0.001 0.001 0 200 400 600 800 10001200140016001800 0 50 100 150 200 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 f = 1MHz I FSM T = 25 C 8.3ms 8.3ms a 1cyc. 100 100 10 10 T = 25 C j 1 1 0 5 10 15 20 25 30 1 10 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.09 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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