RF4C050APTR

RF4C050AP Datasheet Pch -20V -10A Middle Power MOSFET llOutline DFN2020-8S V -20V DSS R (Max.) 26m DS(on) HUML2020L8 I 10A D P 2W D llInner circuit llFeatures 1) Low on - resistance. 2) High Power small mold Package (HUML2020L8). 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Quantity (pcs) 3000 Load switch Taping code TR Marking SJ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -20 V DSS I Continuous drain current 10 A D *1 I Pulsed drain current 20 A DP V Gate - Source voltage 0 -8 V GSS *2 P Power dissipation 2 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.003 RF4C050AP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 Thermal resistance, junction - ambient R - 62.5 - /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -9.3 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -20V, V = 0V - - -10 A DSS DS GS drain current I Gate - Source leakage current V = -8V, V = 0V - - -10 A GSS GS DS Gate threshold voltage V V = -10V, I = -1mA -0.3 - -1.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 1.8 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -5.0A - 18 26 GS D V = -2.5V, I = -2.5A - 22 31 GS D Static drain - source *3 R m DS(on) on - state resistance V = -1.8V, I = -2.5A - 27 45 GS D V = -1.5V, I = -1.0A - 32 65 GS D Forward Transfer *3 Y V = -10V, I = -5.0A 8 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 MOUNTED ON 40mm40mm Cu BOARD *3 Pulsed www.rohm.com 2/11 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.