RF505BM6SFHTL ROHM

Super Fast Recovery Diode RF505BM6SFH Datasheet AEC-Q101 Qualified Series Dimensions (Unit : mm) Land Size Figure (Unit : mm) 6.0 Standard Fast Recovery Application 1.6 1.6 1 General rectification 2.3 2.3 TO-252 Features Cathode 1) Low switching loss Structure ROHM : TO-252 2) Low forward voltage JEITA : SC-63 1 : Manufacture Date High current overload capacity 3) Open Anode Taping Dimensions (Unit : mm) Construction Silicon epitaxial planar type Absolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Duty0.5 600 Repetitive peak reverse voltage V RM V Direct voltage 600 Reverse voltage V R 60Hz half sin wave , Resistive load T =90C Average rectified foward current I c 5 A o 60Hz half sin wave ,Non-repetitive at T=25C I Forward current surge peak j 50 A FSM T - 150 Operating junction temperature C j Storage temperature T - 55 to 150 C stg Electrical Characteristics (T = 25C) j Parameter Conditions Symbol Min. Typ. Max. Unit I =5A Forward voltage V -1.3 1.7 V F F V =600V Reverse current I -0.05 10 R A R I =0.5A, I =1A, Irr=0.25I Reverse recovery time trr - 22 30 ns F R R R Junction to case C / W Thermal resistance -- 6.0 th(j-c) www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2018.12 - Rev.C 1/4 3.0 2.0 6.0Datasheet RF505BM6SFH Electrical Characteristic Curves 100 100000 T = 150 C j T = 125 C j 10000 10 1000 T = 75 C j 1 T = 150 C j 100 T = 125 C j T = 25 C j 0.1 T = 75 C j 10 T = 25 C j 0.01 1 0 100 200 300 400 500 600 0 500 1000 1500 2000 2500 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 f = 1MHz I FSM T = 25 C a 8.3ms 8.3ms 1cyc. 100 100 10 10 T = 25 C j 1 1 0 5 10 15 20 25 30 110 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2018.12 - Rev.C 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM