Product Information

RJU003N03T106

RJU003N03T106 electronic component of ROHM

Datasheet
MOSFET N-CH 30V 300MA SOT-323
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0417 ea
Line Total: USD 0.42

310 - Global Stock
Ships to you between
Wed. 08 May to Mon. 13 May
MOQ: 10  Multiples: 10
Pack Size: 10

 More Buying Options & Price Grid(s)

Availability Price Quantity
9 - Global Stock


Ships to you between
Wed. 08 May to Mon. 13 May

MOQ : 10
Multiples : 10
10 : USD 0.053
100 : USD 0.0428
300 : USD 0.0377
3000 : USD 0.0339
6000 : USD 0.0308
9000 : USD 0.0293

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Mounting Style
Package / Case
Packaging
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Brand Category
LoadingGif

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Additional Infomation About Product

The RJU003N03T106 is a N-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed and manufactured by ROHM Semiconductor. It has a drain-source voltage (VDS) of 30 volts and a source-drain current (ID) of 300 milliamperes (mA). This MOSFET, which comes in an SOT-323 package, is suitable for use in switching applications, amplifiers, voltage level shifters and other applications. The product features include high switching speed (<200 ns), low on-resistance (RDS(ON)) (<2O) and low input capacitance (Ciss). It is suitable for operation across a temperature range of -55°C to 150°C.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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