Product Information

RND030N20TL

RND030N20TL electronic component of ROHM

Datasheet
Trans MOSFET N-CH 200V 3A 3-Pin(2+Tab) CPT T/R

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.968 ea
Line Total: USD 0.97

1231 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1231 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 0.968
10 : USD 0.8521
100 : USD 0.5955
500 : USD 0.512
1000 : USD 0.4584
2500 : USD 0.3999
10000 : USD 0.3936
25000 : USD 0.3936

2405 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 74
Multiples : 1
74 : USD 0.4978
100 : USD 0.4753
200 : USD 0.4738
500 : USD 0.424
1000 : USD 0.4214

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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RND030N20 Nch 200V 3.0A Power MOSFET Datasheet Outline V 200V DSS CPT3 (SC-63) R (Max.) 870m DS(on) <SOT-428> (3) I 3.0A D (2) (1) P 20W D Features Inner circuit (3) 1) Low on-resistance. 1 * (1) Gate 2) Fast switching speed. (2) Drain (1) 3) Drive circuits can be simple. (3) Source 2 * 4) Parallel use is easy. 1 ESD PROTECTION DIODE 2 BODY DIODE 5) Pb-free lead plating RoHS compliant (2) 6) 100% Avalanche tested Packaging specifications Packaging Taping Reel size (mm) 330 Application Tape width (mm) 16 Switching Power Supply Type Basic ordering unit (pcs) 2,500 Automotive Motor Drive Taping code TL Automotive Solenoid Drive Marking N03N20 Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 200 V DSS *1 T = 25C I 3.0 A c D Continuous drain current *1 T = 100C I 1.6 A c D *2 Pulsed drain current A I 6.0 D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 0.73 mJ E AS *3 Avalanche current I 1.5 A AR T = 25C P 20 W c D Power dissipation *4 P 0.85 W T = 25C D a T Junction temperature 150 C j Range of storage temperature T C 55 to 150 stg www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2012.08 - Rev.A 1/12 Not Recommended for New DesignsData Sheet RND030N20 Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 6.25 C/W Thermal resistance, junction - case thJC *4 R - - 147 C/W Thermal resistance, junction - ambient thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 200 - - V (BR)DSS GS D V = 200V, V = 0V DS GS - -10 T = 25C j Zero gate voltage drain current I A DSS V = 200V, V = 0V DS GS - - 100 T = 125C j I V = 30V, V = 0V Gate - Source leakage current -- 10 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.2 - 5.2 V GS (th) DS D V = 10V, I = 1.5A - 620 870 GS D Static drain - source *5 V = 10V, I = 1.5A R m GS D DS(on) on - state resistance - 1150 1610 T = 125C j g V = 10V, I = 1.5A Forward transfer admittance 0.75 1.50 - S fs DS D www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2012.08 - Rev.A 2/12 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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ROHM Semiconductor

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