Product Information

RPT-38PB3F

RPT-38PB3F electronic component of ROHM

Datasheet
Phototransistors PHOTO Visible Ray Cut Colored Pkg
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9039 ea
Line Total: USD 0.9

738 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
738 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1
1 : USD 0.9039
10 : USD 0.5923
100 : USD 0.4094
500 : USD 0.4036
1000 : USD 0.3381
2000 : USD 0.3117
10000 : USD 0.3093

1940 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 228
Multiples : 1
228 : USD 0.402
250 : USD 0.394

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Package / Case
Maximum Power Dissipation
Maximum On-State Collector Current
Maximum Dark Current
Collector- Emitter Voltage VCEO Max
Rise Time
Fall Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Type
Brand
Factory Pack Quantity :
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Additional Infomation About Product

Phototransistor, top view type RPT-38PB3F Datasheet The RPT-38PB3F is a silicon planar phototransistor. Since it is molded in plastic with a visible light filter, there is almost no effect from stray light. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode. Applications Outline Optical control equipment Receiver for sensors Features 1) High sensitivity. 2) Almost no effect from stray light. Dimensions (Unit : mm) Absolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Collector-emitter voltage 32 V CEO V Emitter-collector voltage 5 V ECO I 30 mA Collector current C P 150 mW Collector power dissipation C T Operating temperature 25 to 85 C opr T Storage temperature 30 to 85 C stg 2018.06 - Rev.C 1/5Datasheet RPT-38PB3F Electrical and optical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. I V =5V, E=500Lx 2.0 - - mA Light current C CE I V =10V (Black box) Dark current -- 0.5 A CEO CE -- 800 - nm Peak sensitivity wavelength p V I =1mA, E=500Lx -- 0.4 V Collector-emitter saturationv oltage CE(sat) C Half-angle - - 36 - deg 1/2 V =5V, I =1mA, CC C trtf - 10 - s Response time R =100 L Classified table of rank Light current : I Item Unit C 2.0 5.0 mA Lto Mt3.0o 8.0 mA 5.5 13.0 mA Nto Pt10.0o 25.0 mA 2018.06 - Rev.C 2/5

HS Compliance

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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