RPT-38PB3F ROHM

Phototransistor, top view type RPT-38PB3F Datasheet The RPT-38PB3F is a silicon planar phototransistor. Since it is molded in plastic with a visible light filter, there is almost no effect from stray light. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode. Applications Outline Optical control equipment Receiver for sensors Features 1) High sensitivity. 2) Almost no effect from stray light. Dimensions (Unit : mm) Absolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Collector-emitter voltage 32 V CEO V Emitter-collector voltage 5 V ECO I 30 mA Collector current C P 150 mW Collector power dissipation C T Operating temperature 25 to 85 C opr T Storage temperature 30 to 85 C stg 2018.06 - Rev.C 1/5Datasheet RPT-38PB3F Electrical and optical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. I V =5V, E=500Lx 2.0 - - mA Light current C CE I V =10V (Black box) Dark current -- 0.5 A CEO CE -- 800 - nm Peak sensitivity wavelength p V I =1mA, E=500Lx -- 0.4 V Collector-emitter saturationv oltage CE(sat) C Half-angle - - 36 - deg 1/2 V =5V, I =1mA, CC C trtf - 10 - s Response time R =100 L Classified table of rank Light current : I Item Unit C 2.0 5.0 mA Lto Mt3.0o 8.0 mA 5.5 13.0 mA Nto Pt10.0o 25.0 mA 2018.06 - Rev.C 2/5