X-On Electronics has gained recognition as a prominent supplier of RQ3E080GNTB mosfet across the USA, India, Europe, Australia, and various other global locations. RQ3E080GNTB mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

RQ3E080GNTB

RQ3E080GNTB electronic component of ROHM
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Part No.RQ3E080GNTB
Manufacturer: ROHM
Category:MOSFET
Description: ROHM Semiconductor MOSFET 4.5V Drive Nch MOSFET
Datasheet: RQ3E080GNTB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4956 ea
Line Total: USD 0.5

Availability - 2696
Ships to you between
Thu. 06 Jun to Mon. 10 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2696 - WHS 1


Ships to you between Thu. 06 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4956
10 : USD 0.3841
100 : USD 0.2162
1000 : USD 0.1564
3000 : USD 0.1403
9000 : USD 0.1311
24000 : USD 0.1311
45000 : USD 0.1253

4943 - WHS 2


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 205
Multiples : 1
205 : USD 0.1982
500 : USD 0.1674
1000 : USD 0.159
2000 : USD 0.1579
3000 : USD 0.1507

1609 - WHS 3


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 319
Multiples : 1
319 : USD 0.3199
500 : USD 0.3084
1000 : USD 0.2983

2522 - WHS 4


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 319
Multiples : 1
319 : USD 0.3199
500 : USD 0.3084
1000 : USD 0.2983
2500 : USD 0.2895

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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We proudly offer the RQ3E080GNTB MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the RQ3E080GNTB MOSFET.

RQ3E080GN Datasheet Nch 30V 18A Middle Power MOSFET llOutline V 30V DSS R (Max.) 16.7m DS(on) HSMT8 I 18A D P 14W D llInner circuit llFeatures 1) Low on - resistance. 2) High power package (HSMT8). 3) Pb-free lead plating RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested. llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 3000 Taping code TB Marking E080GN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS *1 T = 25C I 18 A c D Continuous drain current T = 25C I 8 A a D *2 I Pulsed drain current 32 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 8 A AS *3 E Avalanche energy, single pulse 4.9 mJ AS *1 P 14 W D Power dissipation *4 P 2.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160517 - Rev.002 RQ3E080GN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 8.9 /W thJC *4 R Thermal resistance, junction - ambient - - 62.5 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS Breakdown voltage D - 28 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 24V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 20V, V = 0V - - 100 nA GSS GS DS V Gate threshold voltage V = V , I = 1mA 1.2 - 2.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -3.87 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 8A - 12.9 16.7 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 8A - 17.5 31.2 GS D R Gate resistance f=1MHz, open drain - 2.5 - G Forward Transfer *5 Y V = 5V, I = 8A 7 - - S fs DS D Admittance *1 Tc = 25 , Limited only by maximum temperature allowed. *2 Pw10s , Duty cycle 1% *3 L 0.1mH, V = 15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20160517 - Rev.002 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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