RQ3L050GNTB ROHM

RQ3L050GN Nch 60V 13A Power MOSFET Datasheet llOutline V 60V DSS R (Max.) 61m DS(on) HSMT8 I 13A D P 14.8W D llInner circuit llFeatures 1) Low on - resistance 2) High Power Package (HSMT8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free 5) 100% Rg and UIS tested llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 3000 Taping code TB Marking L050GN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 60 V DSS *1 T = 25C I 13 A c D Continuous drain current T = 25C I 5 A a D *2 I Pulsed drain current 20 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 5.0 A AS *3 E Avalanche energy, single pulse 3.9 mJ AS *1 P 14.8 W D Power dissipation *4 P 2.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 1/11 20171215 - Rev.003 RQ3L050GN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 8.4 /W thJC *4 R Thermal resistance, junction - ambient - - 62.5 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 60 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 60 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 60V, V = 0V - - 10 A DSS DS GS drain current Gate - Source leakage current I V = 20V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = V , I = 25A 1.0 - 2.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -5.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 5A - 43 61 GS D Static drain - source *5 R V = 6.0V, I = 5A - 47 66 m DS(on) GS D on - state resistance V = 4.5V, I = 5A - 61 86 GS D R Gate resistance f=1MHz, open drain - 1.9 - G Forward Transfer *5 Y V = 5V, I = 5A 3.5 - - S fs DS D Admittance *1 T =25 , Limited only by maximum temperature allowed. c *2 Pw 10s, Duty cycle 1% *3 L 0.2mH, V = 30V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/11 20171215 - Rev.003 2017 ROHM Co., Ltd. All rights reserved.