X-On Electronics has gained recognition as a prominent supplier of RQ5A030APTL mosfet across the USA, India, Europe, Australia, and various other global locations. RQ5A030APTL mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

RQ5A030APTL ROHM

RQ5A030APTL electronic component of ROHM
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See Product Specifications
Part No.RQ5A030APTL
Manufacturer: ROHM
Category:MOSFET
Description: P-Channel 12 V 3A (Ta) 1W (Ta) Surface Mount TSMT3
Datasheet: RQ5A030APTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4083 ea
Line Total: USD 0.41

Availability - 7371
Ships to you between
Thu. 13 Jun to Mon. 17 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7371 - WHS 1


Ships to you between Thu. 13 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4083
10 : USD 0.2794
100 : USD 0.1794
1000 : USD 0.1288
3000 : USD 0.1081
9000 : USD 0.1081
24000 : USD 0.1081
45000 : USD 0.1035

4404 - WHS 2


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 278
Multiples : 1
278 : USD 0.3667
500 : USD 0.3536
1000 : USD 0.342
2500 : USD 0.3319

4951 - WHS 3


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 131
Multiples : 1
131 : USD 0.3104
500 : USD 0.2422
1000 : USD 0.1344
2000 : USD 0.1338
3000 : USD 0.1332

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
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Mxhts
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We are delighted to provide the RQ5A030APTL from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ5A030APTL and other electronic components in the MOSFET category and beyond.

RQ5A030AP Datasheet Pch -12V -3A Small Signal MOSFET llOutline SOT-346T V -12V DSS SC-96 R (Max.) 62m DS(on) TSMT3 I 3.0A D P 1.0W D llInner circuit llFeatures 1) Low on - resistance 2) High Power small mold Package (TSMT3) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking SD llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -12 V DSS I Continuous drain current 3.0 A D *1 I Pulsed drain current 9.0 A DP V Gate - Source voltage 0 -8 V GSS *2 P 1.0 W D Power dissipation *3 P 0.7 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2018 ROHM Co., Ltd. All rights reserved. 20180619 - Rev.003 RQ5A030AP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 178 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -12 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -5.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -12V, V = 0V - - -10 A DSS DS GS drain current Gate - Source leakage current I V = -8V, V = 0V - - -10 A GSS GS DS V Gate threshold voltage V = -6V, I = -1mA -0.3 - -1.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.7 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -3.0A - 44 62 GS D V = -2.5V, I = -1.5A - 55 77 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.8V, I = -1.5A - 75 110 GS D V = -1.5V, I = -0.6A - 90 180 GS D R Gate resistance f = 1MHz, open drain - 1.2 - G Forward Transfer *4 Y V = -6V, I = -3.0A 3.5 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20180619 - Rev.003 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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