RQ5E015RPTL ROHM

RQ5E015RPTL electronic component of ROHM
RQ5E015RPTL ROHM
RQ5E015RPTL MOSFETs
RQ5E015RPTL  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RQ5E015RPTL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ5E015RPTL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RQ5E015RPTL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET PCH -30V -1.5A SMALL SIGNAL
Datasheet: RQ5E015RPTL Datasheet (PDF)
Price (USD)
1: USD 0.6762 ea
Line Total: USD 0.68 
Availability : 3253
  
Ship by Wed. 06 Aug to Fri. 08 Aug
QtyUnit Price
1$ 0.6762
10$ 0.465
100$ 0.2979
500$ 0.2233
1000$ 0.2035
3000$ 0.1562
6000$ 0.1562
9000$ 0.1463

Availability 3253
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6762
10$ 0.465
100$ 0.2979
500$ 0.2233
1000$ 0.2035
3000$ 0.1562
6000$ 0.1562
9000$ 0.1463

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RQ5E015RPTL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ5E015RPTL and other electronic components in the MOSFETs category and beyond.

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RQ5E015RP Datasheet Pch -30V -1.5A Small Signal MOSFET llOutline SOT-346T V -30V DSS SC-96 R (Max.) 160m DS(on) TSMT3 I 1.5A D P 1.0W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S Protection Diode 3) Small Surface Mount Package (TSMT3) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Quantity (pcs) 3000 Taping code TL Marking VH llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -30 V DSS I Continuous drain current 1.5 A D *1 I Pulsed drain current 6 A DP V Gate - Source voltage 20 V GSS *2 P 1.0 W D Power dissipation *3 P 0.7 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2019 ROHM Co., Ltd. All rights reserved. 20190527 - Rev.002 RQ5E015RP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 178 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -24.1 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.3 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -1.5A - 115 160 GS D Static drain - source *4 R V = -4.5V, I = -0.7A - 170 240 m DS(on) GS D on - state resistance V = -4.0V, I = -0.7A - 190 270 GS D R Gate resistance f = 1MHz, open drain - 27 - G Forward Transfer *4 Y V = -10V, I = -1.5A 1.2 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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