X-On Electronics has gained recognition as a prominent supplier of RQ5H020TNTL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ5H020TNTL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ5H020TNTL ROHM

RQ5H020TNTL electronic component of ROHM
RQ5H020TNTL ROHM
RQ5H020TNTL MOSFETs
RQ5H020TNTL  Semiconductors

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See Product Specifications
Part No. RQ5H020TNTL
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 45 V 2A (Ta) 700mW (Ta) Surface Mount TSMT3
Datasheet: RQ5H020TNTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.2652 ea
Line Total: USD 1.27 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 19 May to Fri. 23 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.9254
6000 : USD 0.8692

0
Ship by Mon. 19 May to Fri. 23 May
MOQ : 1
Multiples : 1
1 : USD 2.17
10 : USD 1.8805
100 : USD 1.4659
500 : USD 1.211
1000 : USD 0.9561

0
Ship by Mon. 19 May to Fri. 23 May
MOQ : 1
Multiples : 1
1 : USD 2.17
10 : USD 1.8805
100 : USD 1.4659
500 : USD 1.211
1000 : USD 0.9561

0
Ship by Mon. 19 May to Fri. 23 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.6446
6000 : USD 0.6097
12000 : USD 0.5749
18000 : USD 0.54
24000 : USD 0.5052

0
Ship by Thu. 15 May to Mon. 19 May
MOQ : 1
Multiples : 1
1 : USD 1.2652
10 : USD 0.8093
100 : USD 0.5862
250 : USD 0.5851
500 : USD 0.4885
1000 : USD 0.4328
3000 : USD 0.3965
6000 : USD 0.3965

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RQ5H020TNTL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ5H020TNTL and other electronic components in the MOSFETs category and beyond.

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RQ5H020TN Datasheet Nch 45V 2A Small Signal MOSFET llOutline SOT-346T V 45V DSS SC-96 R (Max.) 180m DS(on) TSMT3 I 2.0A D P 1.0W D llInner circuit llFeatures 1) Low on-resistance 2) Built-in G-S Protection Diode 3) Space saving small surface mount package (TSMT3) 4) Pb-free lead plating RoHS compliant. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking QF llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 45 V DSS I Continuous drain current 2.0 A D *1 I Pulsed drain current 8 A DP V Gate - Source voltage 12 V GSS *2 P 1.0 W D Power dissipation *3 P 0.7 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2017 ROHM Co., Ltd. All rights reserved. 20170316 - Rev.002 RQ5H020TN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 178 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 45 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 46.8 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 45V, V = 0V - - 1 A DSS DS GS drain current I V = 12V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3.9 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 2.0A - 130 180 GS D Static drain - source *4 R V = 4.0V, I = 2.0A - 135 190 m DS(on) GS D on - state resistance V = 2.5V, I = 2.0A - 180 250 GS D R Gate resistance f = 1MHz, open drain - 9.5 - G Forward Transfer *4 Y V = 10V, I = 2.0A 1.5 - - S fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 Mounted on a ceramic board (30x30x0.8mm) *3 Mounted on a FR4 (25x25x0.8mm) *4 Pulsed www.rohm.com 2/11 20170316 - Rev.002 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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