Rectifying Diode RR2LAM4STF Datasheet AEC-Q101 Qualified Series Dimensions (Unit : mm) Land Size Figure (Unit : mm) Standard Rectifier 0.10 2.0 0.17 0.05 2.500.20 (1) Applications General rectification PMDTM Features Structure Cathode (2) 1) Low forward voltage 1.500.20 0.950.10 ROHM : PMDTM 2) High current overload capacity JEDEC : SOD-128 : Manufacture Date Anode Construction Taping Dimensions (Unit : mm) Silicon diffused junction type Absolute Maximum Ratings (T = 25C) l Parameter Symbol Conditions Limits Unit V Duty0.5 400 Repetitive peak reverse voltage V RM V Direct reverse voltage 400 V Reverse voltage R Glass epoxy board mounted, I T =90C Average forward rectified current 2 A o 60Hz half sin wave, resistive load 60Hz half sin wave, I Non-repetitive forward surge current 50 A FSM non-repetitive at T=25C j Junction temperature T - 150 C j T - Storage temperature 55 to 150 C stg Electrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit V I =2A Forward voltage 0.75 0.9 1.1 V F F I V =400V Reverse current -- 10 A R R R Junction to lead Thermal resistance -- 25C/W th(j-l) www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2017.04 - Rev.B 1/4 3.700.20 4.700.14 1.4 4.4Datasheet RR2LAM4STF Electrical Characteristic Curves 10 100000 T = 150 C j T = 125 C j T = 150 C 10000 j 1 1000 T = 75 C T = 125 C j j 0.1 100 T = 75 C j T = 25 C j 10 T = 25 C j 0.01 T = 40 C j 1 T = 40 C j 0.001 0.1 0 100 200 300 400 0 200 400 600 800 1000 1200 1400 1600 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 100 1000 I f = 1MHz FSM 8.3ms 8.3ms T = 25 C a 1cyc. 100 10 10 T = 25 C j 1 1 0 5 10 15 20 25 30 110 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2017.04 - Rev.B 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM