X-On Electronics has gained recognition as a prominent supplier of RRH040P03TB1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. RRH040P03TB1 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RRH040P03TB1 ROHM

RRH040P03TB1 electronic component of ROHM
RRH040P03TB1 ROHM
RRH040P03TB1 MOSFETs
RRH040P03TB1  Semiconductors

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See Product Specifications
Part No. RRH040P03TB1
Manufacturer: ROHM
Category: MOSFETs
Description: P-Channel 30 V 4A (Ta) 650mW (Ta) Surface Mount 8-SOP
Datasheet: RRH040P03TB1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.4 ea
Line Total: USD 1.4 
Availability - 1183
Ship by Tue. 06 May to Thu. 08 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1183
Ship by Tue. 06 May to Thu. 08 May
MOQ : 1
Multiples : 1
1 : USD 1.4
10 : USD 0.972
100 : USD 0.6171
500 : USD 0.5071
1000 : USD 0.4664
2500 : USD 0.407
5000 : USD 0.3938
10000 : USD 0.3872

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Rds On
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RRH040P03TB1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RRH040P03TB1 and other electronic components in the MOSFETs category and beyond.

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RRH040P03 Datasheet Pch -30V -4A Power MOSFET llOutline V -30V DSS R (Max.) 75m DS(on) SOP8 I 4A D P 2.0W D llInner circuit llFeatures 1) Low on-resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 2500 Taping code TB Marking RRH040P03 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -30 V DSS I Continuous drain current 4 A D *1 I Pulsed drain current 16 A DP V Gate - Source voltage 20 V GSS *2 P 2.0 W D Power dissipation *3 P 1.4 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20161221 - Rev.001 RRH040P03 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 62.5 /W thJA Thermal resistance, junction - ambient *3 R - - 89.2 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -24.1 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.3 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -4A - 55 75 GS D Static drain - source *4 R V = -4.5V, I = -2A - 85 115 m DS(on) GS D on - state resistance V = -4.0V, I = -2A - 95 125 GS D R Gate resistance f = 1MHz, open drain - 25 - G Forward Transfer *4 Y V = -10V, I = -4A 3 - - S fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20161221 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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