X-On Electronics has gained recognition as a prominent supplier of RS1E240BNTB MOSFET across the USA, India, Europe, Australia, and various other global locations. RS1E240BNTB MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

RS1E240BNTB ROHM

RS1E240BNTB electronic component of ROHM
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See Product Specifications
Part No.RS1E240BNTB
Manufacturer: ROHM
Category: MOSFET
Description: Trans MOSFET N-CH 30V 24A 8-Pin HSOP EP T/R
Datasheet: RS1E240BNTB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.69 ea
Line Total: USD 0.69

Availability - 7452
Ships to you between
Thu. 27 Jun to Mon. 01 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7452 - WHS 1


Ships to you between Thu. 27 Jun to Mon. 01 Jul

MOQ : 1
Multiples : 1
1 : USD 0.69
10 : USD 0.5279
100 : USD 0.422
500 : USD 0.3669
1000 : USD 0.3208
2500 : USD 0.2909
5000 : USD 0.2829
10000 : USD 0.2737
25000 : USD 0.2714

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Continuous Drain Current
Power Dissipation
Mounting
Operating Temp Range
Type
Polarity
Drain-Source On-Volt
Number Of Elements
Operating Temperature Classification
Gate-Source Voltage Max
Package Type
Rad Hardened
Pin Count
Configuration
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RS1E240BNTB from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RS1E240BNTB and other electronic components in the MOSFET category and beyond.

RS1E240BN Datasheet Nch 30V 40A Middle Power MOSFET llOutline V 30V DSS R (Max.) 3.2m DS(on) HSOP8 I 40A D P 30W D llInner circuit llFeatures 1) Low on - resistance. 2) High Power small mold Package (HSOP8). 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Quantity (pcs) 2500 Taping code TB Marking RS1E240BN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS *1 T = 25C I 40 A c D Continuous drain current T = 25C I 24 A a D *2 I Pulsed drain current 96 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 40 A AS *3 E Avalanche energy, single pulse 140 mJ AS *1 P 30 W D Power dissipation *4 P 3 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/10 20190527 - Rev.005 RS1E240BN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 4.2 /W thJC *4 R Thermal resistance, junction - ambient - - 41.7 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS Breakdown voltage D - 21 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 16V, V = 0V - - 100 nA GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 24A - 2.3 3.2 GS D Static drain - source *4 R m DS(on) on - state resistance V = 4.5V, I = 24A - 3.3 4.6 GS D R Gate resistance f=1MHz, open drain - 1.2 - G Forward Transfer *4 Y V = 5V, I = 24A 18 - - S fs DS D Admittance *1 Tc=25 , Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 0.05mH, V = 24V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu Board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20190527 - Rev.005 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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