RSA5MGTR ROHM

RSA5M Diodes ESD Protection Device (TVS) RSA5M z Applications z Dimensions (Unit : mm) z Land size figure (Unit : mm) ESD Protection 0.10.1 0.05 1.60.1 1.2 z Features 1) Small power mold type. (PMDU) 2) High reliability PMDU z Construction 0.90.1 Silicon epitaxial planar 0.80.1 ROHM : PMDU z Structure JEDEC :SOD-123 Manufacture Date z Taping dimensions (Unit : mm) 0.250.05 1.550.05 2.00.05 4.00.1 1.810.1 4.00.1 1.00.1 1.5MAX z Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Peak pulse power(tp=101000us) 200 Ppk W Stand off power V 5 V RMN Junction temperature 150 Tj Storage temperature -55 to +150 Tstg z Electrical characteristic (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Breakdown voltage VBR 6.4 - 7.0 V I =10.0mA R Clamping voltage VC - - 9.2 V I =21.7A pp V =5.0V Reverse current IR - - 400 uA RMN 1/2 Not Recommended for New Designs 2.60.1 3.50.2 3.50.05 1.750.1 0.85 8.00.2 3.710.1 3.05RSA5M Diodes z Electrical characteristic curves 10000 10 10 Ta=75 Ta=125 f=1MHz Ta=25 1 Ta=150 1000 Ta=75 Ta=-25 1 Ta=125 100 0.1 Ta=150 0.1 10 Ta=25 0.01 Ta=-25 1 0.01 0.001 12 34 5 4.0 5.0 6.0 7.0 8.0 01 2 34 5 REVERSE VOLTAGE:VR(V) ZENER VOLTAGE:Vz(V) REVERSE VOLTAGEVR(V) VR-Ct CHARACTERISTICS VR-IR CHARACTERISTICS Vz-Iz CHARACTERISTICS 1000 0.8 7.0 Ta=25 Ta=25 Ta=25 f=1MHz VR=5V IZ=10mA VR=0V 6.8 800 n=30pcs n=30pcs 0.7 n=10pcs 6.6 600 0.6 6.4 400 AVE:0.661nF AVE:6.58V 0.5 6.2 200 AVE:487nA 6.0 0 0.4 Vz DISRESION MAP IR DISRESION MAP Ct DISRESION MAP Mounted on epoxy bord IM=10mA IF=0.5A 1000 30 No break at 30kV No break at 30kV Rth(j-a) 25 time 1ms 100 300us 20 Rth(j-c) 15 10 10 1 5 0 0.1 C=200pF C=100pF 0.001 0.1 10 1000 TIME:t(s) R=0 R=1.5k Rth-t CHARACTERISTICS ESD DISPERSION MAP 2/2 Not Recommended for New Designs ZENER CURRENT:Iz(mA) ZENER VOLTAGE:Vz() TRANSIENT REVERSE CURRENT:IR (nA) REVERSE CURRENT:IR(nA) THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE BETWEEN CAPACITANCE ELECTROSTATIC TERMINALS:Ct(nF) DISCHARGE TEST ESD(KV) BETWEENTERMINALS:Ct(nF)