RSB12JS2FHT2R ROHM

RSB12JS2FHT2R electronic component of ROHM
RSB12JS2FHT2R ROHM
RSB12JS2FHT2R Zener Diodes
RSB12JS2FHT2R  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RSB12JS2FHT2R Zener Diodes across the USA, India, Europe, Australia, and various other global locations. RSB12JS2FHT2R Zener Diodes are a product manufactured by ROHM. We provide cost-effective solutions for Zener Diodes, ensuring timely deliveries around the world.

Part No. RSB12JS2FHT2R
Manufacturer: ROHM
Category: Zener Diodes
Description: ESD Suppressors / TVS Diodes ZENER DIODE (AUTOMOTIVE)
Datasheet: RSB12JS2FHT2R Datasheet (PDF)
Price (USD)
1: USD 0.465 ea
Line Total: USD 0.46 
Availability : 14485
  
Ship by Mon. 18 Aug to Wed. 20 Aug
QtyUnit Price
1$ 0.465
10$ 0.3287
100$ 0.2438
500$ 0.2101
8000$ 0.2101
24000$ 0.2035

Availability 14485
Ship by Mon. 18 Aug to Wed. 20 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.465
10$ 0.3287
100$ 0.2438
500$ 0.2101
8000$ 0.2101
24000$ 0.2035

   
Manufacturer
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We are delighted to provide the RSB12JS2FHT2R from our Zener Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSB12JS2FHT2R and other electronic components in the Zener Diodes category and beyond.

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Data Sheet Low Capacitance Protection Device RSB12JS2 Applications Dimensions Unit : mm Land size figure(Unit : mm) ESD Protection 1.0 0.5 0.5 1.60.1 0.220.05 0.130.05 (6) (5) (4) Features 0.3 0.25 0.25 0.15 0.15 1) Ultra small mold type. (EMD6) 2) Low capacitance 3) Bi direction 00.1 0.4 EMD6 (1) (2) (3 ) 0.5 0.5 Construction 1.00.1 0.50.05 (6)(5) (4) Silicon Epitaxial Planar Structure ROHM : EMD6 JEITA : SC-75A Size dot (year week factory) (1) (2) (3) Please make 3 and 6 Pin open in circuit upon use. Taping specificationsUnit : mm +0.1 2.00.05 4.00.1 1.5 0 0.30.1 1PIN 0.80.1 4.00.1 1.70.05 0.650.1 Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Power dissipation Pm150W Junction temperature Tj 150 C Storage temperature 55 to 150 Tstg C Electrical characteristic (Ta=25C)( Rating of per diode) Parameter Conditions Symbol Min. Typ. Max. Unit Zener voltage V 9.6 - 14.4 V I =5mA Z Z Reverse current I - - 0.10 A V =9V R R Capacitance between terminals C -1 - pF f=1MHz,V =0V t R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.04 - Rev.C 1/2 1.20.1 1.60.1 1.650.1 5.50.2 0 0.1 3.50.05 1.750.1 ~ 0.45 8.00.2 1.650.01 1.55Data Sheet RSB12JS2 Electrical characteristics curve 10000 10 10 Ta=150 Ta=125 f=1MHz 1000 100 1 Ta=25 Ta=75 Ta=75 10 Ta=125 Ta=25 0.1 1 1 Ta=-25 Ta=150 0.1 Ta=-25 0.01 0.01 0.001 0.001 0.0001 0.1 12 13 14 15 16 17 01 234 567 89 012 345 6789 ZENER VOLTAGE:Vz(V) REVERSE VOLTAGEVR(V) REVERSE VOLTAGE:VR(V) Vz-Iz CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS 10 13.8 1.5 Ta=25 Ta=25 Ta=25 9 1.4 IZ=5mA f=1MHz VR=9V 8 13.7 n=30pcs 1.3 VR=0V n=30pcs n=10pcs 7 1.2 6 1.1 13.6 5 1 4 13.5 0.9 AVE:0.996pF 3 0.8 AVE:13.572V AVE:0.3089nA 2 0.7 13.4 0.6 1 0.5 13.3 0 Vz DISRESION MAP Ct DISRESION MAP IR DISRESION MAP 100 1000 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board 10 IM=10mA IF=100mA 10 time 1ms 300us 1 1 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 TIME:t(s) ZENER CURRENT(mA) Rth-t CHARACTERISTICS Zz-Iz CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.04 - Rev.C 2/2 ZENER VOLTAGE:Vz() DYNAMIC IMPEDANCE:Zz() ZENER CURRENT:Iz(mA) TRANSIENT REVERSE CURRENT:IR (nA) REVERSE CURRENT:IR(nA) THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE CAPACITANCE BETWEEN BETWEENTERMINALS:Ct(pF) TERMINALS:Ct(pF)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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