Product Information

RSB12ZT2L

RSB12ZT2L electronic component of ROHM

Datasheet
TVS Diodes - Transient Voltage Suppressors DI LO-CAPACITANCE ZENER; SMT
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

496: USD 0.1875 ea
Line Total: USD 93

4850 - Global Stock
Ships to you between
Fri. 10 May to Thu. 16 May
MOQ: 496  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
4850 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 496
Multiples : 1
496 : USD 0.1791
500 : USD 0.1743
1000 : USD 0.1707

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Pd - Power Dissipation
Package / Case
Packaging
Series
Capacitance
Dimensions
Operating Voltage
Termination Style
Brand
Peak Surge Current
Peak Pulse Power Dissipation
Polarity
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

Low Capacitance Protection Device RSB12Z Applications Dimensions(Unit : mm) Land size figure(Unit : mm) ESD Protection 0.4 1.2 0.1 0.13 0.05 0.32 0.05 (3) Features 0.4 1)Ultra small mold type.(VMD3) 0.5 2)Low capacitance 00. 1 3)Bi direction 0.8 (1) (2) VMD3 0.22 0.05 0.22 0.05 0.5 0.05 0.4 0.4 Construction Silicon epitaxial planer Structure ROHM : VMD3 dot(year week factory) Taping specifications(Unit : mm) 0.30.1 2.00.04 4.00.07 1.550.05 0.50.05 0.60.05 (4.00.1) 2.00.05 1.30.05 0 0 Absolute maximum ratings(Ta=25) Parameter Limits Symbol Unit Power dissipation 150 PmW Junction temperature Tj 150 Storage temperature -55 to +150 Tstg Electical characteristics(Ta=25) Parameter Symbol Min. Typ. Max. Unit Conditions Zener voltage V 9.6 - 14.4 V I =5mA Z Z Reverse current I - - 0.10 A V =9V R R Capacitance between terminals C f=1MHz,V =0V -1 - pF t R www.rohm.com 2010.08 - Rev.A 1/3 2010 ROHM Co., Ltd. All rights reserved. 0.80.1 1.20.1 0.45 1.350.05 0 1.750.07 00.1 5.50.2 3.50.05 8.00.1 0.45 1.15 RSB12Z Data Sheet Electrical characteristics curve 10000 10 10 Ta=150 Ta=125 f=1MHz 1000 Ta=25 Ta=75 100 1 Ta=75 Ta=125 10 Ta=-25 Ta=150 Ta=25 1 0.1 1 0.1 Ta=-25 0.01 0.01 0.001 0.001 0.0001 0.1 11 12 13 14 15 16 012 3456 789 01 234 567 89 ZENER VOLTAGE:Vz(V) REVERSE VOLTAGEV (V) R REVERSE VOLTAGE:V (V) R Vz-Iz CHARACTERISTICS V -I CHARACTERISTICS R R V -Ct CHARACTERISTICS R 10 1.5 13.8 Ta=25 Ta=25 Ta=25 9 1.4 I =5mA f=1MHz Z V =9V R 8 1.3 V =0V 13.7 n=30pcs R n=30pcs 7 n=10pcs 1.2 6 1.1 13.6 5 1 4 0.9 13.5 AVE:0.996pF 3 0.8 AVE:13.572V 2 0.7 13.4 AVE:0.3089nA 1 0.6 0 0.5 13.3 Vz DISRESION MAP Ct DISRESION MAP I DISRESION MAP R 10000 Mounted on epoxy board 100 I =1mA I =10mA M F 1ms time 1000 Rth(j-a) 300us 10 100 Rth(j-c) 1 10 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 TIME:t(s) ZENER CURRENT(mA) Rth-t CHARACTERISTICS Zz-Iz CHARACTERISTICS www.rohm.com 2010 ROHM Co., Ltd. All rights reserved. 2/3 2010.08 - Rev.A ZENER CURRENT:Iz(mA) DYNAMIC IMPEDANCE:Zz() ZENER VOLTAGE:Vz() TRANSIENT REVERSE CURRENT:I (nA) REVERSE CURRENT:I (nA) R R THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE CAPACITANCE BETWEEN BETWEENTERMINALS:Ct(pF) TERMINALS:Ct(pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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