Product Information

RSS065N06FRATB

RSS065N06FRATB electronic component of ROHM

Datasheet
MOSFET Nch 60V Vds 6.5A 0.031Rds(on) 11Qg
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8626 ea
Line Total: USD 0.86

2053 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2053 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 0.8828
10 : USD 0.7641
100 : USD 0.5399
500 : USD 0.4841
1000 : USD 0.4189
2500 : USD 0.3654
5000 : USD 0.3631
10000 : USD 0.3548
25000 : USD 0.3536

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
LoadingGif

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Additional Infomation About Product

RSS065N06FRA Datasheet Nch 60V 6.5A Power MOSFET llOutline V 60V DSS SOP8 R (Max.) 37m DS(on) I 6.5A D P 2.0W D llInner circuit llFeatures 1) Low on-resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating RoHS compliant 4) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Quantity (pcs) 2500 Taping code TB Marking RSS065N06 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 60 V DSS I Continuous drain current 6.5 A D *1 I Pulsed drain current 26 A DP V Gate - Source voltage 20 V GSS *2 P 2.0 W D Power dissipation *3 P 1.4 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2019 ROHM Co., Ltd. All rights reserved. 20190520 - Rev.002 RSS065N06FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 62.5 /W thJA Thermal resistance, junction - ambient *3 R - - 89.2 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 60 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 63.7 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 60V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -2.8 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 6.5A - 24 37 GS D Static drain - source *4 R V = 4.5V, I = 6.5A - 28 44 m DS(on) GS D on - state resistance V = 4.0V, I = 6.5A - 31 48 GS D R Gate resistance f = 1MHz, open drain - 4.0 - G Forward Transfer *4 Y V = 10V, I = 6.5A 4 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a Cu board (40400.8mm) *4 Pulsed www.rohm.com 2/11 20190520 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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