X-On Electronics has gained recognition as a prominent supplier of RTL035N03TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RTL035N03TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RTL035N03TR ROHM

RTL035N03TR electronic component of ROHM
RTL035N03TR ROHM
RTL035N03TR MOSFETs
RTL035N03TR  Semiconductors

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See Product Specifications
Part No. RTL035N03TR
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 30 V 3.5A (Ta) 1W (Ta) Surface Mount TUMT6
Datasheet: RTL035N03TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9187 ea
Line Total: USD 0.92 
Availability - 1491
Ship by Mon. 23 Jun to Wed. 25 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1491
Ship by Mon. 23 Jun to Wed. 25 Jun
MOQ : 1
Multiples : 1
1 : USD 0.9187
10 : USD 0.5763
100 : USD 0.3542
500 : USD 0.2684
1000 : USD 0.2464
3000 : USD 0.1969
9000 : USD 0.1881

2046
Ship by Wed. 25 Jun to Tue. 01 Jul
MOQ : 293
Multiples : 1
293 : USD 1.1084

4135
Ship by Wed. 25 Jun to Tue. 01 Jul
MOQ : 240
Multiples : 1
240 : USD 1.0855
500 : USD 0.6812
1000 : USD 0.4325
3000 : USD 0.43

2910
Ship by Wed. 25 Jun to Tue. 01 Jul
MOQ : 293
Multiples : 1
293 : USD 1.1084

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Type
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the RTL035N03TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RTL035N03TR and other electronic components in the MOSFETs category and beyond.

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RTL035N03 Datasheet Nch 30V 3.5A Small Signal MOSFET llOutline SOT-363T V 30V DSS SC-113DA R (Max.) 56m DS(on) TUMT6 I 3.5A D P 1.0W D llInner circuit llFeatures 1) Low on - resistance 2) Space saving, small surface mount package (TUMT6) 3) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking PM llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS I Continuous drain current 3.5 A D *1 I Pulsed drain current 14 A DP V Gate - Source voltage 12 V GSS *2 P 1.0 W D Power dissipation *3 P 0.91 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2018 ROHM Co., Ltd. All rights reserved. 20180328 - Rev.002 RTL035N03 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 137 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I V = 12V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 3.5A - 40 56 GS D Static drain - source *4 R V = 4.0V, I = 3.5A - 42 59 m DS(on) GS D on - state resistance V = 2.5V, I = 3.5A - 56 79 GS D R Gate resistance f = 1MHz, open drain - 9.3 - G Forward Transfer *4 Y V = 10V, I = 3.5A 3 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20180328 - Rev.002 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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