RTL035N03TR ROHM

RTL035N03TR electronic component of ROHM
RTL035N03TR ROHM
RTL035N03TR MOSFETs
RTL035N03TR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RTL035N03TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RTL035N03TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RTL035N03TR
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 30 V 3.5A (Ta) 1W (Ta) Surface Mount TUMT6
Datasheet: RTL035N03TR Datasheet (PDF)
Price (USD)
1: USD 0.93 ea
Line Total: USD 0.93 
Availability : 1491
  
Ship by Wed. 06 Aug to Fri. 08 Aug
QtyUnit Price
1$ 0.93
10$ 0.5875
100$ 0.3553
500$ 0.2684
1000$ 0.2453
3000$ 0.1969
6000$ 0.1969
9000$ 0.1881

Availability 1491
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.93
10$ 0.5875
100$ 0.3553
500$ 0.2684
1000$ 0.2453
3000$ 0.1969
6000$ 0.1969
9000$ 0.1881


Availability 2046
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 293
Multiples : 1
QtyUnit Price
293$ 1.1084


Availability 4135
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 561
Multiples : 1
QtyUnit Price
561$ 0.4641
739$ 0.3523
1000$ 0.3081
3000$ 0.2238


Availability 2910
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 293
Multiples : 1
QtyUnit Price
293$ 1.1084

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Type
Width
Cnhts
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Mxhts
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We are delighted to provide the RTL035N03TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RTL035N03TR and other electronic components in the MOSFETs category and beyond.

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RTL035N03 Datasheet Nch 30V 3.5A Small Signal MOSFET llOutline SOT-363T V 30V DSS SC-113DA R (Max.) 56m DS(on) TUMT6 I 3.5A D P 1.0W D llInner circuit llFeatures 1) Low on - resistance 2) Space saving, small surface mount package (TUMT6) 3) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking PM llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS I Continuous drain current 3.5 A D *1 I Pulsed drain current 14 A DP V Gate - Source voltage 12 V GSS *2 P 1.0 W D Power dissipation *3 P 0.91 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2018 ROHM Co., Ltd. All rights reserved. 20180328 - Rev.002 RTL035N03 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 137 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I V = 12V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 3.5A - 40 56 GS D Static drain - source *4 R V = 4.0V, I = 3.5A - 42 59 m DS(on) GS D on - state resistance V = 2.5V, I = 3.5A - 56 79 GS D R Gate resistance f = 1MHz, open drain - 9.3 - G Forward Transfer *4 Y V = 10V, I = 3.5A 3 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20180328 - Rev.002 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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