RTL035N03TR ROHM

RTL035N03TR electronic component of ROHM
RTL035N03TR ROHM
RTL035N03TR MOSFETs
RTL035N03TR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RTL035N03TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RTL035N03TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.RTL035N03TR
Manufacturer:ROHM
Category:MOSFETs
Description:N-Channel 30 V 3.5A (Ta) 1W (Ta) Surface Mount TUMT6
Datasheet:RTL035N03TR Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
432: USD 0.6026 ea
Line Total: USD 260.32 
Availability : 2864
  
Ship by Wed. 24 Jun to Tue. 30 Jun
QtyUnit Price
432$ 0.6026
619$ 0.4204
785$ 0.3314
1000$ 0.2999
3000$ 0.2108
6000$ 0.2073
9000$ 0.2003
15000$ 0.1977
21000$ 0.1947
  

Availability2904
Ship by Mon. 22 Jun to Wed. 24 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0137
10$ 0.6287
100$ 0.3795
500$ 0.2871
1000$ 0.2629
3000$ 0.2013


Availability2864
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 432
Multiples : 1
QtyUnit Price
432$ 0.6026
619$ 0.4204
785$ 0.3314
1000$ 0.2999
3000$ 0.2108
6000$ 0.2073
9000$ 0.2003
15000$ 0.1977
21000$ 0.1947


Availability2910
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 291
Multiples : 1
QtyUnit Price
291$ 1.223


Availability805
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 742
Multiples : 1
QtyUnit Price
742$ 0.3505
770$ 0.3379

   
Manufacturer
Product Category
RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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Technology
Number of Channels
Vgs - Gate-Source Voltage
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Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
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We are delighted to provide the RTL035N03TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RTL035N03TR and other electronic components in the MOSFETs category and beyond.

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RTL035N03 Datasheet Nch 30V 3.5A Small Signal MOSFET llOutline SOT-363T V 30V DSS SC-113DA R (Max.) 56m DS(on) TUMT6 I 3.5A D P 1.0W D llInner circuit llFeatures 1) Low on - resistance 2) Space saving, small surface mount package (TUMT6) 3) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking PM llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS I Continuous drain current 3.5 A D *1 I Pulsed drain current 14 A DP V Gate - Source voltage 12 V GSS *2 P 1.0 W D Power dissipation *3 P 0.91 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2018 ROHM Co., Ltd. All rights reserved. 20180328 - Rev.002 RTL035N03 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 137 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I V = 12V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 3.5A - 40 56 GS D Static drain - source *4 R V = 4.0V, I = 3.5A - 42 59 m DS(on) GS D on - state resistance V = 2.5V, I = 3.5A - 56 79 GS D R Gate resistance f = 1MHz, open drain - 9.3 - G Forward Transfer *4 Y V = 10V, I = 3.5A 3 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20180328 - Rev.002 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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