X-On Electronics has gained recognition as a prominent supplier of RTQ045N03TR mosfet across the USA, India, Europe, Australia, and various other global locations. RTQ045N03TR mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

RTQ045N03TR

RTQ045N03TR electronic component of ROHM
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See Product Specifications
Part No.RTQ045N03TR
Manufacturer: ROHM
Category:MOSFET
Description: MOSFET N-CH 30V 4.5A TSMT6
Datasheet: RTQ045N03TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8438 ea
Line Total: USD 0.84

Availability - 2312
Ships to you between
Thu. 06 Jun to Mon. 10 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2283 - WHS 1


Ships to you between Thu. 06 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 0.6808
10 : USD 0.5992
100 : USD 0.4243
500 : USD 0.3645
1000 : USD 0.3186
3000 : USD 0.284
6000 : USD 0.2818
9000 : USD 0.2725
24000 : USD 0.2703

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We proudly offer the RTQ045N03TR MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the RTQ045N03TR MOSFET.

RTQ045N03 Datasheet Nch 30V 4.5A Small Signal MOSFET llOutline SOT-457T V 30V DSS SC-95 R (Max.) 43m DS(on) TSMT6 I 4.5A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT6) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking QM llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS I Continuous drain current 4.5 A D *1 I Pulsed drain current 18 A DP V Gate - Source voltage 12 V GSS *2 P 1.25 W D Power dissipation *3 P 0.95 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2017 ROHM Co., Ltd. All rights reserved. 20170419 - Rev.003 Not Recommended for New Designs RTQ045N03 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 /W thJA Thermal resistance, junction - ambient *3 R - - 132 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I V = 12V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 4.5A - 30 43 GS D Static drain - source *4 R V = 4.0V, I = 4.5A - 32 45 m DS(on) GS D on - state resistance V = 2.5V, I = 4.5A - 42 60 GS D R Gate resistance f = 1MHz, open drain - 6.7 - G Forward Transfer *4 Y V = 10V, I = 4.5A 4.5 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20170419 - Rev.003 2017 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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