RZR040P01TL ROHM

RZR040P01TL electronic component of ROHM
RZR040P01TL ROHM
RZR040P01TL MOSFETs
RZR040P01TL  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RZR040P01TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RZR040P01TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RZR040P01TL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Med Pwr, Sw MOSFET P Chan, -12V, -4A
Datasheet: RZR040P01TL Datasheet (PDF)
Price (USD)
3000: USD 0.2037 ea
Line Total: USD 611.1 
Availability : 0
  
QtyUnit Price
3000$ 0.2037
63000$ 0.1479

Availability 0
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.2363
6000$ 0.2112
15000$ 0.2034
30000$ 0.1981


Availability 0
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6094
10$ 0.5164
100$ 0.3958
500$ 0.3128
1000$ 0.2503


Availability 0
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6094
10$ 0.5164
100$ 0.3958
500$ 0.3128
1000$ 0.2503


Availability 0
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0354
10$ 0.8087
100$ 0.5628
500$ 0.4487
1000$ 0.3879


Availability 0
Ship by Wed. 01 Oct to Fri. 03 Oct
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.2996
6000$ 0.2826
9000$ 0.2701


Availability 0
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.297
6000$ 0.275
9000$ 0.275
12000$ 0.275
15000$ 0.275


Availability 0
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.2037
63000$ 0.1479


Availability 0
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.2751
50$ 0.2693
150$ 0.1989
500$ 0.1762


Availability 0
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 100
Multiples : 100
QtyUnit Price
100$ 0.2804

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Mounting Style
Package / Case
Packaging
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the RZR040P01TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RZR040P01TL and other electronic components in the MOSFETs category and beyond.

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RZR040P01 Datasheet Pch -12V -4A Small Signal MOSFET llOutline SOT-346T V -12V DSS SC-96 R (Max.) 30m DS(on) TSMT3 I 4A D P 1.0W D llInner circuit llFeatures 1) Low on-resistance 2) Built-in G-S Protection Diode 3) Small Surface Mount Package (TSMT3) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking YE llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -12 V DSS I Continuous drain current 4 A D *1 I Pulsed drain current 16 A DP V Gate - Source voltage 10 V GSS *2 P 1.0 W D Power dissipation *3 P 0.7 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2017 ROHM Co., Ltd. All rights reserved. 20170316 - Rev.002 Not Recommended for New Designs RZR040P01 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 125 /W thJA Thermal resistance, junction - ambient *3 R - - 178 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -12 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -21.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -12V, V = 0V - - -1 A DSS DS GS drain current Gate - Source leakage current I V = 10V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = -6V, I = -1mA -0.3 - -1.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.4 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -4A - 22 30 GS D V = -2.5V, I = -2A - 30 42 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.8V, I = -2A - 40 60 GS D V = -1.5V, I = -0.8A - 55 110 GS D R Gate resistance f = 1MHz, open drain - 11.7 - G Forward Transfer *4 Y V = -6V, I = -4A 6.5 - - S fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 Mounted on a ceramic board (30x30x0.8mm) *3 Mounted on a FR4 (25x25x0.8mm) *4 Pulsed www.rohm.com 2/11 20170316 - Rev.002 2017 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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