X-On Electronics has gained recognition as a prominent supplier of SCT2450KEC mosfet across the USA, India, Europe, Australia, and various other global locations. SCT2450KEC mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

SCT2450KEC

SCT2450KEC electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.SCT2450KEC
Manufacturer: ROHM
Category:MOSFET
Description: MOSFET FET 1200V 5A 450mOhm Silicon Carbide SiC
Datasheet: SCT2450KEC Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 10.8701
10 : USD 9.4662
100 : USD 7.8376
500 : USD 6.8249
1000 : USD 6.0043
N/A

Obsolete
0 - WHS 2

MOQ : 3
Multiples : 3
3 : USD 8.8947
10 : USD 8.5389
30 : USD 8.5389
100 : USD 8.5389
250 : USD 8.5389
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1
1 : USD 8.4778
10 : USD 6.3118
25 : USD 6.1476
50 : USD 5.9732
100 : USD 5.8089
250 : USD 5.4703
N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1
1 : USD 8.4778
10 : USD 6.3118
100 : USD 5.8089
250 : USD 5.4703
500 : USD 5.1213
1000 : USD 4.7826
2500 : USD 4.6389
N/A

Obsolete
0 - WHS 5

MOQ : 1
Multiples : 1
1 : USD 18.62
2 : USD 12.166
4 : USD 11.508
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We proudly offer the SCT2450KEC MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the SCT2450KEC MOSFET.

SCT2450KE Datasheet N-channel SiC power MOSFET lOutline TO-247 V 1200V DSS TO-247N R (Typ.) 450m DS(on) I 10A D (3) P (2) 85W (1) D lInner circuit lFeatures (1) Gate 1) Low on-resistance (2) Drain 2) Fast switching speed (3) Source 3) Fast reverse recovery *1 Body Diode 4) Easy to parallel *1 5) Simple to drive lPackaging specifications TO-247 TO-247N 6) Pb-free lead plating RoHS compliant Package Packing Tube Reel size (mm) - lApplication Tape width (mm) - Solar inverters Type Basic ordering unit (pcs) 30 DC/DC converters Packing code C C11 Induction heating Marking SCT2450KE Motor drives lAbsolute maximum ratings (Ta = 25C) Parameter Symbol Value Unit V Drain - Source voltage 1200 V DSS *2 T = 25C 10 A I c D Continuous drain current *2 T = 100C I 7 A c D *3 Pulsed drain current 25 A I D,pulse V Gate - Source voltage (DC) -6 to 22 V GSS *4 Gate - Source surge voltage (T 300nsec) V -10 to 26 V surge GSS-surge Power dissipation (T = 25C) P 85 W c D T Junction temperature 175 C j Range of storage temperature T C -55 to +175 stg www.rohm.com TSQ50210-SCT2450KE 2019 ROHM Co., Ltd. All rights reserved. 1/12 22.Feb.2019 - Rev.002 TSZ2211114001Datasheet SCT2450KE lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 1200 - - V (BR)DSS GS D voltage V = 1200V, V = 0V DS GS Zero gate voltage I T = 25C - 1 10 A DSS j drain current T = 150C - 2 - j Gate - Source leakage current I V = +22V, V = 0V - - 100 nA GSS+ GS DS I V = -6V, V = 0V Gate - Source leakage current - - -100 nA GSS- GS DS Gate threshold voltage V V = V , I = 0.9mA 1.6 2.8 4.0 V GS (th) DS GS D lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - 1.36 1.77 C/W thJC R Thermal resistance, junction - ambient - - 50 C/W thJA Soldering temperature, wavesoldering for 10s T - - 265 C sold lTypical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit R C 2.30E-01 2.19E-04 th1 th1 R 6.87E-01 K/W C 1.29E-03 Ws/K th2 th2 R C 4.41E-01 1.31E-02 th3 th3 www.rohm.com TSQ50210-SCT2450KE 2019 ROHM Co., Ltd. All rights reserved. 2/12 22.Feb.2019 - Rev.002 TSZ2211115001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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